METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE

• US 20110223766A1
• Filed: 05/20/2011
• Published: 09/15/2011
• Est. Priority Date: 12/08/2008
• Status: Abandoned Application

• Current Assignee: Fujitsu Limited
• Original Assignee: Fujitsu Limited
• Inventors: Nakata, Yoshihiro, Kobayashi, Yasushi, Minoura, Yuichi
• Application Number:
  US13/112,579
• Publication Number:
  US 20110223766A1
• Time in Patent Office: Days
• US Class Current: 438/694
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02203 the layer being porous
• CPC Class Codes: H01L 21/02282 liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
• CPC Class Codes: H01L 21/3105 After-treatment
• CPC Class Codes: H01L 21/76807 for dual damascene structures
• CPC Class Codes: H01L 21/76825 by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc. plasma treatment H01L21/76826
• CPC Class Codes: H01L 21/76826 by contacting the layer with gases, liquids or plasmas
• CPC Class Codes: H01L 21/76829 characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers

Abstract

A method for manufacturing a semiconductor device includes: exposing an insulating film including a siloxane bond to an energy beam or plasma; and exposing the insulating film to a gas (excluding N₂ and H₂O gases) including at least one element selected from the group consisting of hydrogen, carbon, nitrogen and silicon, as an constituent element, wherein, in the exposing to the gas, after a relative permittivity of the insulating film descends by the exposing the insulating film to the gas, the exposing is completed before a time point when the relative permittivity of the insulating film first ascends.

Claims

1. A semiconductor device manufacturing method comprising:

irradiating an insulating film including a siloxane bond with an energy beam or plasma; and

exposing the insulating film to a gas including at least one element selected from the group consisting of hydrogen, carbon, nitrogen and silicon excluding N₂ or H₂O gases,

wherein said exposing the insulating film to the gas is finished before a time point when a relative permittivity of the insulating film first ascends after the relative permittivity descends by said exposing the insulating film to the gas.

2. The semiconductor device manufacturing method according to claim 1,

wherein exposure time of the insulating film to the gas is 0.5 minute or more and 10 minutes or less.

3. The semiconductor device manufacturing method according to claim 1,

wherein gas pressure during said exposing the insulating film to the gas is 0.05 Pa or more and 700 Pa or less.

4. The semiconductor device manufacturing method according to claim 1,

wherein the insulating film is an interlayer insulating film where a wiring is formed, and

a temperature of the insulating film in the exposing to the gas is 0°

C. or more and 400°

C. or less.

5. The semiconductor device manufacturing method according to claim 1,

wherein the gas is a gas selected from the group consisting of hydrogen, methane, ethylene, ammonia, silane and hexamethyldisilazane.

6. The semiconductor device manufacturing method according to claim 1, wherein the energy beam is an electron beam or an ultraviolet ray.

7. The semiconductor device manufacturing method according to claim 1,

wherein the exposing to the gas is a process to enhance mechanical strength of the insulating film.

8. The semiconductor device manufacturing method according to claim 1,

wherein the exposing to the gas is a process to process the insulating film.

9. The semiconductor device manufacturing method according to claim 8,

wherein the exposing to the gas is one or both of a process to etch the insulating film by the exposure thereof to plasma and a step to remove a photoresist film formed on the insulating film by the exposure thereof to plasma.

10. The semiconductor device manufacturing method according to claim 1,

wherein the relative permittivity of the insulating film is 2.7 or less and 2.0 or more.

11. The semiconductor device manufacturing method according to claim 1,

wherein the insulating film is an insulating film formed by coating a liquid composition including a silicon compound on a semiconductor substrate, and by sintering the coated liquid composition.

12. The semiconductor device manufacturing method according to claim 11,

wherein the silicon compound is a silicon compound obtained by hydrolyzing tetraalkylorthosilicate (TAOS) and alkoxysilane (AS) represented by the following general formula (I) under existence of tetraalkylammoniumhydroxide (TAAOH).

X_nSi(OR)_4-n  

 

(I)

(in the formula, X represents hydrogen atom, fluorine atom, alkyl group with a carbon number of 1 to 8, fluorine-substituted alkyl group, aryl group or vinyl group, and R represents hydrogen atom, alkyl group with a carbon number of 1 to 8, aryl group or vinyl group. Further, n is an integer of 0 to 3.)

13. The semiconductor device manufacturing method according to claim 11,

wherein the silicon compound is a silicon compound obtained by mixing an intermediate being obtained after hydrolyzing or partially hydrolyzing tetraalkylorthosilicate (TAOS) under existence of tetraalkylammoniumhydroxide (TAAOH), with alkoxysilane (AS) represented by the following general formula (II) or a hydrolysate or a partial hydrolysate of the alkoxysilane, or by hydrolyzing a portion or the entire of the silicon compound.

X_nSi(OR)_4-n  

 

(II)

(in the formula, X represents hydrogen atom, fluorine atom, alkyl group with a carbon number of 1 to 8, fluorine-substituted alkyl group, aryl group or vinyl group, and R represents hydrogen atom, alkyl group with a carbon number of 1 to 8, aryl group or vinyl group. Further, n is an integer of 0 to 3.)

14. A semiconductor device manufacturing method comprising:

cutting a bond of an insulating film including a siloxane bond; and

exposing the insulating film to a gas including at least one element selected from the group consisting of hydrogen, carbon, nitrogen and silicon excluding nitrogen or H₂O gases,

wherein said exposing the insulating film to the gas is finished before a time point when a relative permittivity of the insulating film first ascends after the relative permittivity descends by the exposing the insulating film to the gas.

15. A semiconductor device manufacturing apparatus comprising:

a processing room including a generation device configured to generate an energy beam or plasma to which an insulating film is irradiated; and

a gas introduction device configured to introduce a gas including at least one element selected from the group consisting of hydrogen, carbon, nitrogen and silicon excluding N₂ or H₂O gases to the processing room, wherein the gas introduction device is configured to finish introducing the gas before a time point when a relative permittivity of the insulating film first ascends after the relative permittivity of the insulating film descends.

16. A semiconductor device manufacturing apparatus according to claim 15,

wherein the energy beam is an electron beam or an ultraviolet ray.

17. The semiconductor device manufacturing apparatus according to claim 15,

wherein the gas is a gas selected from the group consisting of hydrogen, methane, ethylene, ammonia, silane and hexamethyldisilazane.