PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
First Claim
1. A plasma processing apparatus comprising:
- a processing chamber arranged in a vacuum chamber;
a sample stage arranged under the processing chamber and having its top surface on which a wafer to be processed is mounted;
a vacuum decompression unit for evacuating the interior of said processing chamber to reduce the pressure therein; and
introduction holes arranged above said sample stage to admit process gas into said processing chamber, said wafer having its top surface mounted with a film structure and said film structure being etched by using plasma formed by using said process gas, whereinsaid film structure is constituted by having a resist film or a mask film, a poly-silicon film and an insulation film laminated in this order from top to bottom on a substrate and before said wafer is mounted on said sample stage and the poly-silicon film underlying said mask film is etched, plasma is formed inside said processing chamber to cover the surface of members inside said processing chamber with a coating film containing a component of Si.
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Accused Products
Abstract
In a plasma processing apparatus comprising a processing chamber arranged in a vacuum chamber, a sample stage arranged under the processing chamber and having its top surface on which a wafer to be processed is mounted, a vacuum decompression unit for evacuating the interior of the processing chamber to reduce the pressure therein, and introduction holes arranged above said sample stage to admit process gas into the processing chamber, the wafer having its top surface mounted with a film structure and the film structure being etched by using plasma formed by using the process gas, the film structure is constituted by having a resist film or a mask film, a poly-silicon film and an insulation film laminated in this order from top to bottom on a substrate and before the wafer is mounted on the sample stage and the poly-silicon film underlying the mask film is etched, plasma is formed inside the processing chamber to cover the surface of members inside the processing chamber with a coating film containing a component of Si.
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Citations
8 Claims
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1. A plasma processing apparatus comprising:
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a processing chamber arranged in a vacuum chamber; a sample stage arranged under the processing chamber and having its top surface on which a wafer to be processed is mounted; a vacuum decompression unit for evacuating the interior of said processing chamber to reduce the pressure therein; and introduction holes arranged above said sample stage to admit process gas into said processing chamber, said wafer having its top surface mounted with a film structure and said film structure being etched by using plasma formed by using said process gas, wherein said film structure is constituted by having a resist film or a mask film, a poly-silicon film and an insulation film laminated in this order from top to bottom on a substrate and before said wafer is mounted on said sample stage and the poly-silicon film underlying said mask film is etched, plasma is formed inside said processing chamber to cover the surface of members inside said processing chamber with a coating film containing a component of Si. - View Dependent Claims (2, 3, 4)
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5. A plasma processing method in which a wafer to be processed is mounted on the top surface of a sample stage arranged under a processing chamber disposed inside a decompressed vacuum chamber and plasma is formed by admitting process gas to said processing chamber through introduction holes arranged above said sample stage to etch a film structure mounted on the top surface of said wafer, said film structure being constituted by having a resist film or a mask film, a poly-silicon film and an insulation film laminated in this order from top to bottom on a substrate, wherein
before said wafer is mounted on said sample stage and said poly-silicon film underlying said mask film is etched, plasma is formed inside said processing chamber to cover the surface of members inside said processing chamber with a coating film containing a component of Si.
Specification