NITRIDE-BASED LIGHT EMITTING DEVICE
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Abstract
A nitride-based light emitting device capable of achieving an enhancement in light emission efficiency and an enhancement in reliability is disclosed. The nitride-based light emitting device includes a light emitting layer including a quantum well layer and a quantum barrier layer, and a stress accommodating layer arranged on at least one surface of the quantum well layer of the light emitting layer.
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Citations
43 Claims
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1-20. -20. (canceled)
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21. A nitride-based light emitting device comprising:
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a first-type nitride-based layer having a first conductivity; a second-type nitride-based layer on the first-type nitride-based layer, the second-type nitride-based layer having a second conductivity; a light emitting layer arranged between the first-type nitride-based layer and the second-type nitride-based layer, the light emitting layer comprising; a plurality of quantum barrier layers; and a quantum well layer and a nitride-based layer arranged between the adjacent quantum barrier layers, wherein the composition of the quantum well layer and the nitride-based layer are different, a first electrode electrically connected to the first-type nitride-based layer; and a second electrode electrically connected to the second-type nitride-based layer. In composition or Al composition - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43)
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Specification