HIGH EFFICIENCY LIGHT EMITTING DIODE
First Claim
1. A light emitting diode (LED), comprising:
- a support substrate;
a semiconductor stack positioned on the support substrate, the semiconductor stack comprising a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer;
a first electrode positioned between the support substrate and the semiconductor stack, in ohmic contact with the semiconductor stack;
a first bonding pad positioned on a portion of the first electrode that is exposed outside of the semiconductor stack; and
a second electrode positioned on the upper surface of the semiconductor stack,wherein the semiconductor stack has a generally frusto-pyramidal shape and comprises first protrusions formed on the upper surface of the semiconductor stack and second protrusions formed on the side surfaces of the semiconductor stack.
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Accused Products
Abstract
Provided is a high-efficiency light emitting diode (LED) that includes: a support substrate; a semiconductor stack positioned on the support substrate, the semiconductor stack including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; a first electrode positioned between the support substrate and the semiconductor stack and in ohmic contact with the semiconductor stack; a first bonding pad positioned on a portion of the first electrode that is exposed outside of the semiconductor stack; and a second electrode positioned on the semiconductor stack. Protrusions are formed on exposed surfaces of the semiconductor stack. In addition, the second electrode may be positioned between the first electrode and the support substrate and contacted with the n-type compound semiconductor layer through openings of the semiconductor stack.
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Citations
22 Claims
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1. A light emitting diode (LED), comprising:
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a support substrate; a semiconductor stack positioned on the support substrate, the semiconductor stack comprising a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; a first electrode positioned between the support substrate and the semiconductor stack, in ohmic contact with the semiconductor stack; a first bonding pad positioned on a portion of the first electrode that is exposed outside of the semiconductor stack; and a second electrode positioned on the upper surface of the semiconductor stack, wherein the semiconductor stack has a generally frusto-pyramidal shape and comprises first protrusions formed on the upper surface of the semiconductor stack and second protrusions formed on the side surfaces of the semiconductor stack. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A light emitting diode (LED) comprising:
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a support substrate; a semiconductor stack disposed on the support substrate, the semiconductor stack comprising a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer, the p-type compound semiconductor layer being positioned closer to the support substrate than the n-type compound semiconductor layer; an opening formed in the p-type compound semiconductor layer and the active layer and exposing the n-type compound semiconductor layer; a p-electrode positioned between the p-type compound semiconductor layer and the support substrate and in ohmic contact with the p-type compound semiconductor layer; an n-electrode positioned between the p-electrode and the support substrate, the n-electrode contacting the n-type compound semiconductor layer through the opening; and a reflective insulating layer positioned between the p-electrode and the n-electrode, to reflect light from the active layer away from the support substrate. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A light emitting diode (LED), comprising:
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a substrate; a semiconductor stack positioned on the substrate, the semiconductor stack comprising a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; a first electrode positioned between the substrate and the semiconductor stack; a first bonding pad positioned on a portion of the first electrode that is exposed outside of the semiconductor stack; and a second electrode positioned on the upper surface of the semiconductor stack, wherein the semiconductor stack comprises first protrusions formed on the upper surface of the semiconductor stack and second protrusions formed on a side surface of the semiconductor stack, and the side surface and the upper surface are not disposed in orthogonal planes.
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Specification