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HIGH EFFICIENCY LIGHT EMITTING DIODE

  • US 20110227109A1
  • Filed: 01/07/2011
  • Published: 09/22/2011
  • Est. Priority Date: 03/22/2010
  • Status: Active Grant
First Claim
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1. A light emitting diode (LED), comprising:

  • a support substrate;

    a semiconductor stack positioned on the support substrate, the semiconductor stack comprising a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer;

    a first electrode positioned between the support substrate and the semiconductor stack, in ohmic contact with the semiconductor stack;

    a first bonding pad positioned on a portion of the first electrode that is exposed outside of the semiconductor stack; and

    a second electrode positioned on the upper surface of the semiconductor stack,wherein the semiconductor stack has a generally frusto-pyramidal shape and comprises first protrusions formed on the upper surface of the semiconductor stack and second protrusions formed on the side surfaces of the semiconductor stack.

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