LIGHT-EMITTING DEVICE

• US 20110227120A1
• Filed: 06/02/2011
• Published: 09/22/2011
• Est. Priority Date: 11/23/2007
• Status: Active Grant

• Current Assignee: Epistar Corporation
• Original Assignee: Epistar Corporation
• Inventors: YANG, Yu-Chen, Yeh, Jui-Hung, Jou, Li-Ping, Shen, Chien-Fu
• Granted Patent: US 8,872,204 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/48463 the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/641 characterized by the materials

Abstract

A light-emitting device comprises a substrate, an epitaxial structure formed on the substrate including a first semiconductor layer, a second semiconductor layer, and a light-emitting layer formed between the first semiconductor layer and the second semiconductor layer. A trench is formed in the epitaxial structure to expose a part of side surface of the epitaxial structure and a part of surface of the first semiconductor layer, so that a first conductive structure is formed on the part of surface of the first semiconductor layer in the trench, and a second conductive structure is formed on the second semiconductor layer. The first conductive structure includes a first electrode and a first pad electrically contacted with each other. The second conductive structure includes a second electrode and a second pad electrically contacted with each other. Furthermore, the area of at least one of the first pad and the second pad is between 1.5×10⁴ μm² and 6.2×10⁴ μm².

Claims

1. A light-emitting device comprising:

a conductive substrate;

an adhesive layer on the conductive substrate;

a reflection layer on the adhesive layer;

a second semiconductor layer on the reflection layer;

a light-emitting layer on the second semiconductor layer;

a first semiconductor layer on the light-emitting layer, wherein the thickness of the first semiconductor layer is H;

at least one trench through the first semiconductor layer, wherein the depth of the trench is h; and

a first conductive structure on the first semiconductor layer;

wherein the depth of the trench h is greater than the ⅓

of the thickness of the first semiconductor layer H.

2. The light-emitting device according to claim 1, wherein the at least one trench is formed by removing a portion of the first semiconductor layer.

3. The light-emitting device according to claim 1, wherein the depth of the trench h is not greater than the thickness of the first semiconductor layer H.

4. The light-emitting device according to claim 2, wherein the total area of the trench is not greater than 50% of the area of the top surface of the first semiconductor layer.

5. The light-emitting device according to claim 1, wherein the conductive substrate comprising Si, Ge, Cu, Mo, and ZnO.

6. The light-emitting device according to claim 1, wherein the adhesive layer comprising soldering tin, low temperature metal, metal silicides, PbSn, AuGe, AuBe, AuSi, Sn, In, and PdIn.

7. The light-emitting device according to claim 1, wherein the reflection layer comprising Ag, Al, Zn, MR, Ru, Ti, Rh, Cr, and Pt.

8. The light-emitting device according to claim 1, wherein the first conductive structure comprising a first electrode and a first pad.

9. The light-emitting device according to claim 1, wherein the first conductive structure comprising Ni, Au, Pt, Pd, Mg, Cu, Zn, Ag, Sc, Co, Rh, Li, Be, Ca, Ru, Re, Ti, Ta, Na, and La.

10. The light-emitting device according to claim 1, wherein the conductive substrate can be used for a second conductive structure.

11. The light-emitting device according to claim 8, wherein the area of the first pad is between 1.5×

10⁴ μ

m² and 6.2×

10⁴ μ

m².