SEMICONDUCTOR CHIP ASSEMBLY WITH POST/BASE HEAT SPREADER WITH THERMAL VIA

• US 20110227122A1
• Filed: 05/20/2011
• Published: 09/22/2011
• Est. Priority Date: 03/25/2008
• Status: Active Grant

• Current Assignee: Bridge Semiconductor Corporation
• Original Assignee: Bridge Semiconductor Corporation
• Inventors: Shih, Ming Yu, Lin, Charles W.C., Wang, Chia-Chung
• Granted Patent: US 8,525,214 B2
• Time in Patent Office: Days
• US Class Current: 257/99
• CPC Class Codes: H01L 21/486 Via connections through the substrate with or without pins
• CPC Class Codes: H01L 2224/2919 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/32188 the layer connector connecting to a bonding area protruding from the surface of the item
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/83855 Hardening the adhesive by curing, i.e. thermosetting
• CPC Class Codes: H01L 2224/85205 Ultrasonic bonding
• CPC Class Codes: H01L 2224/85207 Thermosonic bonding
• CPC Class Codes: H01L 23/3677 Wire-like or pin-like cooling fins or heat sinks
• CPC Class Codes: H01L 24/29 of an individual layer connector
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/83 using a layer connector
• CPC Class Codes: H01L 24/85 using a wire connector wire bonding in general B23K20/004
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01012 : Magnesium [Mg]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01058 : Cerium [Ce]
• CPC Class Codes: H01L 2924/01077 : Iridium [Ir]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01087 : Francium [Fr]
• CPC Class Codes: H01L 2924/0665 : Epoxy resin
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/207 : Diameter ranges
• CPC Class Codes: H01L 33/483 : Containers
• CPC Class Codes: H01L 33/642 : characterized by the shape
• CPC Class Codes: H05K 1/0204 : using means for thermal conduction connection in the thickness direction of the substrate H05K1/0207 takes precedence
• CPC Class Codes: H05K 2201/09054 : Raised area or protrusion of metal substrate
• CPC Class Codes: H05K 2201/10106 : Light emitting diode [LED]
• CPC Class Codes: H05K 2203/0369 : Etching selective parts of a metal substrate through part of its thickness, e.g. using etch resist
• CPC Class Codes: H05K 3/0061 : onto a metallic substrate, e.g. a heat sink heat sinks for electric apparatus H05K7/20

Abstract

A semiconductor chip assembly includes a semiconductor device, a heat spreader, a conductive trace, an adhesive and a support layer. The heat spreader includes a post, a base, an underlayer and a thermal via. The conductive trace includes a pad and a terminal. The semiconductor device is electrically connected to the conductive trace and thermally connected to the heat spreader. The post extends upwardly from the base into an opening in the adhesive, the base extends laterally from the post, the support layer is sandwiched between the base and the underlayer and the thermal via extends from the base through the support layer to the underlayer. The conductive trace provides signal routing between the pad and the terminal.

Claims

1. A semiconductor chip assembly, comprising:

a semiconductor device;

an adhesive that includes an opening;

a support layer;

a heat spreader that includes a post, a base, an underlayer and a thermal via, wherein (i) the post is adjacent to the base and extends above the base in an upward direction, (ii) the base covers the post in a downward direction opposite the upward direction, extends laterally from the post in lateral directions orthogonal to the upward and downward directions and is sandwiched between the post and the underlayer, (iii) the underlayer extends below and is spaced from the base, covers the post in the downward direction and extends laterally beyond the post, and (iv) the thermal via extends from the base to the underlayer, is spaced from and laterally offset from the post and provides a thermally conductive path between the base and the underlayer; and

a conductive trace that includes a pad and a terminal;

wherein the semiconductor device overlaps the post, the base, the support layer and the underlayer, is electrically connected to the pad and thereby electrically connected to the terminal and is thermally connected to the post and thereby thermally connected to the underlayer;

wherein the adhesive is mounted on and extends above the base, extends laterally from the post to or beyond the terminal and is sandwiched between the base and the pad;

wherein the support layer is sandwiched between the base and the underlayer, covers the post in the downward direction and extends laterally beyond the post; and

wherein the post extends into the opening, the base is sandwiched between the adhesive and the support layer, the thermal via extends through the support layer and the underlayer extends below the semiconductor device, the support layer and the pad.

2. The assembly of claim 1, wherein the semiconductor device is an LED chip.

3. The assembly of claim 1, wherein the semiconductor device is electrically connected to the pad using a wire bond and is thermally connected to the post using a die attach.

4. The assembly of claim 1, wherein the semiconductor device is electrically connected to the pad using a first solder joint and is thermally connected to the post using a second solder joint.

5. The assembly of claim 1, wherein the adhesive contacts the post, the base and the thermal via and is spaced from the support layer and the underlayer.

6. The assembly of claim 1, wherein the adhesive covers and surrounds the post in the lateral directions.

7. The assembly of claim 1, wherein the adhesive is coplanar with a top of the post.

8. The assembly of claim 1, wherein the adhesive extends to peripheral edges of the assembly.

9. The assembly of claim 1, wherein the post is integral with the base.

10. The assembly of claim 1, wherein the post has a diameter that decreases as it extends upwardly from the base to its top.

11. The assembly of claim 1, wherein the thermal via includes a plated through-hole that is metallurgically bonded to the base and the underlayer.

12. The assembly of claim 1, wherein the thermal via extends above the post and the adhesive and extends through the base and the adhesive.

13. The assembly of claim 1, wherein the pad and the terminal contact the adhesive.

14. The assembly of claim 1, wherein the pad and the terminal extend above the adhesive, have the same thickness and are coplanar with one another.

15. The assembly of claim 1, wherein the base, the adhesive, the support layer and the underlayer extend to peripheral edges of the assembly.

16. The assembly of claim 1, wherein the post, the base and the underlayer are metallic and the support layer is non-metallic.

17. The assembly of claim 1, wherein the pad, the terminal and the underlayer are the same metals.

18. The assembly of claim 1, wherein the pad, the terminal and the underlayer include a gold, silver or nickel surface layer and a buried copper core and are primarily copper, the post and the base are copper, the thermal via includes copper and the support layer includes plastic.

19. The assembly of claim 1, wherein the conductive trace includes a copper core shared by the pad and the terminal.

20. The assembly of claim 1, wherein the heat spreader includes a copper core shared by the post, the base, the underlayer and the thermal via.

21. A semiconductor chip assembly, comprising:

a semiconductor device;

an adhesive that includes an opening;

a support layer;

a heat spreader that includes a post, a base, a cap, an underlayer and a thermal via, wherein (i) the post is adjacent to and integral with the base and extends above the base in an upward direction, (ii) the base covers the post in a downward direction opposite the upward direction, extends laterally from the post in lateral directions orthogonal to the upward and downward directions and is sandwiched between the post and the underlayer, (iii) the cap extends above and is adjacent to and covers in the upward direction and extends laterally from a top of the post, (iv) the underlayer extends below and is spaced from the base, covers the post in the downward direction and extends laterally beyond the post, and (v) the thermal via extends from the base to the underlayer, is spaced from and laterally offset from the post and the cap and provides a thermally conductive path between the base and the underlayer; and

a conductive trace that includes a pad and a terminal;

wherein the semiconductor device is mounted on the cap, overlaps the post, the base, the cap, the support layer and the underlayer, is electrically connected to the pad and thereby electrically connected to the terminal and is thermally connected to the cap and thereby thermally connected to the underlayer;

wherein the adhesive is mounted on and extends above the base, extends laterally from the post to or beyond the terminal and is sandwiched between the base and the pad;

wherein the support layer is sandwiched between the base and the underlayer, covers the post in the downward direction and extends laterally beyond the post;

wherein the post extends into the opening, the base is sandwiched between the adhesive and the support layer, the cap overlaps the adhesive, the thermal via extends through the support layer and the underlayer extends below the semiconductor device, the support layer and the pad; and

wherein the post, the base, the cap and the underlayer are metallic and the support layer is non-metallic.

22. The assembly of claim 21, wherein the semiconductor device is an LED chip.

23. The assembly of claim 21, wherein the semiconductor device is electrically connected to the pad using a wire bond and is thermally connected to the cap using a die attach.

24. The assembly of claim 21, wherein the semiconductor device is electrically connected to the pad using a first solder joint and is thermally connected to the cap using a second solder joint.

25. The assembly of claim 21, wherein the adhesive contacts the post, the base, the cap and the thermal via, is spaced from the support layer and the underlayer, covers and surrounds the post in the lateral directions and extends to peripheral edges of the assembly.

26. The assembly of claim 21, wherein the post has a diameter that decreases as it extends upwardly from the base to the cap.

27. The assembly of claim 21, wherein the post is coplanar with the adhesive at the base and at the cap.

28. The assembly of claim 21, wherein the thermal via includes a plated through-hole that is metallurgically bonded to the base and the underlayer, extends above the post and the adhesive and extends through the base and the adhesive.

29. The assembly of claim 21, wherein the base, the adhesive, the support layer and the underlayer cover the conductive trace in the downward direction and extend to peripheral edges of the assembly.

30. The assembly of claim 21, wherein the pad and the terminal extend above the adhesive, have the same thickness and are coplanar with one another.

31. The assembly of claim 21, wherein the pad and the cap have the same thickness where closest to one another, have different thickness where the cap is adjacent to the post and are coplanar with one another.

32. The assembly of claim 21, wherein the pad, the terminal, the cap and the thermal via extend above the post and the adhesive, the thermal via extends through the base and the adhesive, the pad and the terminal have the same thickness and are coplanar with one another and the pad and the cap have the same thickness where closest to one another, have different thickness where the cap is adjacent to the post and are coplanar with one another.

33. The assembly of claim 21, wherein the pad, the terminal, the cap and the underlayer are the same metals and the post and the base are the same metal.

34. The assembly of claim 21, wherein the pad, the terminal, the cap and the underlayer include a gold, silver or nickel surface layer and a buried copper core and are primarily copper, the post and the base are copper, the thermal via includes copper and the support layer includes plastic.

35. The assembly of claim 21, wherein the conductive trace includes a copper core shared by the pad and the terminal and the heat spreader includes a copper core shared by the post, the base, the cap, the underlayer and the thermal via.

36. A semiconductor chip assembly, comprising:

a semiconductor device;

an adhesive that includes an opening;

a support layer;

a heat spreader that includes a post, a base, a cap, an underlayer and a thermal via, wherein (i) the post is adjacent to and integral with the base and extends above the base in an upward direction, (ii) the base covers the post in a downward direction opposite the upward direction, extends laterally from the post in lateral directions orthogonal to the upward and downward directions and is sandwiched between the post and the underlayer, (iii) the cap extends above and is adjacent to and covers in the upward direction and extends laterally from a top of the post, (iv) the underlayer extends below and is spaced from the base, covers the post in the downward direction and extends laterally beyond the post, and (v) the thermal via includes a plated through-hole that extends from the base to the underlayer, is metallurgically bonded to the base and the underlayer and provides a thermally conductive path between the base and the underlayer and the thermal via is spaced from and laterally offset from the post and the cap and provides no electrical function; and

a conductive trace that includes a pad, a terminal and a routing line, wherein the routing line provides an electrically conductive path between the pad and the terminal;

wherein the semiconductor device is mounted on the cap, overlaps the post, the base, the cap, the support layer and the underlayer, is electrically connected to the pad and thereby electrically connected to the terminal and is thermally connected to the cap, thereby thermally connected to the post, thereby thermally connected to the base, thereby thermally connected to the thermal via and thereby thermally connected to the underlayer;

wherein the adhesive is mounted on and extends above the base, contacts the post, the base, the cap and the thermal via, is spaced from the support layer and the underlayer, extends laterally from the post to or beyond the terminal and is sandwiched between the base and the pad and between the base and the terminal; and

wherein the support layer is sandwiched between the base and the underlayer, covers the post in the downward direction and extends laterally beyond the post;

wherein the pad, the terminal and the routing line are located above the base and extend above the adhesive;

wherein the post extends into the opening, the base is sandwiched between the adhesive and the support layer and extends below the adhesive, the cap overlaps the adhesive, the plated through-hole extends through the base, the adhesive and the support layer and the underlayer extends below the semiconductor device, the support layer and the conductive trace; and

wherein the post, the base, the cap and the underlayer are metallic and the support layer is non-metallic.

37. The assembly of claim 36, wherein the adhesive covers and surrounds the post in the lateral directions and extends to peripheral edges of the assembly.

38. The assembly of claim 36, wherein the post has a diameter that decreases as it extends upwardly from the base to the cap and is coplanar with the adhesive at the base and at the cap.

39. The assembly of claim 36, wherein the plated through-hole extends above the post and the adhesive.

40. The assembly of claim 36, wherein the plated through-hole is coplanar with the pad, the terminal and/or the routing line above the post and the adhesive.

41. The assembly of claim 36, wherein the base, the adhesive, the support layer and the underlayer cover the conductive trace in the downward direction and extend to peripheral edges of the assembly.

42. The assembly of claim 36, wherein the pad and the terminal have the same thickness and are coplanar with one another and the pad and the cap have the same thickness where closest to one another, have different thickness where the cap is adjacent to the post and are coplanar with one another.

43. The assembly of claim 36, wherein the pad, the terminal, the cap and the underlayer are the same metals and the post and the base are the same metal.

44. The assembly of claim 36, wherein the pad, the terminal, the cap and the underlayer include a gold, silver or nickel surface layer and a buried copper core and are primarily copper, the post and the base are copper, the routing line and the thermal via include copper and the support layer includes plastic.

45. The assembly of claim 36, wherein the conductive trace includes a copper core shared by the pad, the terminal and the routing line and the heat spreader includes a copper core shared by the post, the base, the cap, the underlayer and the thermal via.

46. A semiconductor chip assembly, comprising:

a semiconductor device;

an adhesive that includes an opening;

a support layer;

a heat spreader that includes a post, a base, a cap, an underlayer and a thermal via, wherein (i) the post is adjacent to and integral with the base and extends above the base in an upward direction, (ii) the base covers the post in a downward direction opposite the upward direction, extends laterally from the post in lateral directions orthogonal to the upward and downward directions and is sandwiched between the post and the underlayer, (iii) the cap extends above and is adjacent to and covers in the upward direction and extends laterally from a top of the post, (iv) the underlayer extends below and is spaced from the base, covers the post in the downward direction and extends laterally beyond the post, and (v) the thermal via includes a plated through-hole that extends from the base to the underlayer, is metallurgically bonded to the base and the underlayer and provides a thermally conductive path between the base and the underlayer and the thermal via is spaced from and laterally offset from the post and the cap and provides no electrical function;

a substrate that includes a dielectric layer, wherein an aperture extends through the substrate; and

a conductive trace that includes a pad, a terminal and a routing line, wherein the routing line provides an electrically conductive path between the pad and the terminal;

wherein the semiconductor device is mounted on the cap, overlaps the post, the base, the cap, the support layer and the underlayer, is electrically connected to the pad and thereby electrically connected to the terminal and is thermally connected to the cap, thereby thermally connected to the post, thereby thermally connected to the base, thereby thermally connected to the thermal via and thereby thermally connected to the underlayer;

wherein the adhesive is mounted on and extends above the base, contacts the post, the base, the cap and the thermal via, is spaced from the support layer and the underlayer, extends laterally from the post to or beyond the terminal and is sandwiched between the post and the dielectric layer, between the base and the dielectric layer, between the base and the pad and between the base and the terminal;

wherein the substrate is mounted on the adhesive and extends above the base and the dielectric layer is sandwiched between the conductive trace and the adhesive;

wherein the support layer is sandwiched between the base and the underlayer, covers the post in the downward direction and extends laterally beyond the post;

wherein the pad, the terminal and the routing line are mounted on the dielectric layer and extend above the adhesive and the dielectric layer;

wherein the post extends into the opening and the aperture and extends above and below the aperture, the base is sandwiched between the adhesive and the support layer and extends below the adhesive and the dielectric layer, the cap contacts and overlaps the adhesive and the dielectric layer, the plated through-hole extends through the base, the adhesive, the dielectric layer and the support layer and the underlayer extends below the semiconductor device, the support layer and the conductive trace; and

wherein the post, the base, the cap and the underlayer are metallic and the support layer is non-metallic.

47. The assembly of claim 46, wherein the adhesive covers and surrounds the post in the lateral directions and extends to peripheral edges of the assembly.

48. The assembly of claim 46, wherein the post has a diameter that decreases as it extends upwardly from the base to the cap and is coplanar with the adhesive at the base and at the cap.

49. The assembly of claim 46, wherein the plated through-hole extends above the post and the adhesive.

50. The assembly of claim 46, wherein the plated through-hole is coplanar with the pad, the terminal and/or the routing line above the post and the adhesive.

51. The assembly of claim 46, wherein the base, the adhesive, the dielectric layer, the support layer and the underlayer cover the conductive trace in the downward direction and extend to peripheral edges of the assembly.

52. The assembly of claim 46, wherein the pad and the terminal have the same thickness and are coplanar with one another and the pad and the cap have the same thickness where closest to one another, have different thickness where the cap is adjacent to the post and are coplanar with one another.

53. The assembly of claim 46, wherein the pad, the terminal, the cap and the underlayer are the same metals and the post and the base are the same metal.

54. The assembly of claim 46, wherein the pad, the terminal, the cap and the underlayer include a gold, silver or nickel surface layer and a buried copper core and are primarily copper, the post and the base are copper, the routing line and the thermal via include copper, the dielectric layer includes epoxy or polyimide and the support layer includes epoxy or polyimide.

55. The assembly of claim 46, wherein the conductive trace includes a copper core shared by the pad, the terminal and the routing line and the heat spreader includes a copper core shared by the post, the base, the cap, the underlayer and the thermal via.