SEMICONDUCTOR DEVICE AND DRIVING METHOD OF THE SAME
First Claim
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1. A semiconductor device comprising:
- a first conductive layer on a substrate;
a first organic compound layer over the first conductive layer;
a second organic compound layer over the first conductive layer;
a first insulating layer on the first conductive layer, the first insulating layer interposed between the first organic compound layer and the second organic compound layer;
a second conductive layer on the first organic compound layer;
a third conductive layer on the second organic compound layer; and
a second insulating layer on the second conductive layer, the third conductive layer, and the first insulating layer.
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Abstract
The present invention provides a semiconductor device including a memory that has a memory cell array including a plurality of memory cells, a control circuit that controls the memory, and an antenna, where the memory cell array has a plurality of bit lines extending in a first direction and a plurality of word lines extending in a second direction different from the first direction, and each of the plurality of memory cells has an organic compound layer provided between the bit line and the word line. Data is written by applying optical or electric action to the organic compound layer.
46 Citations
39 Claims
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1. A semiconductor device comprising:
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a first conductive layer on a substrate; a first organic compound layer over the first conductive layer; a second organic compound layer over the first conductive layer; a first insulating layer on the first conductive layer, the first insulating layer interposed between the first organic compound layer and the second organic compound layer; a second conductive layer on the first organic compound layer; a third conductive layer on the second organic compound layer; and a second insulating layer on the second conductive layer, the third conductive layer, and the first insulating layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A semiconductor device comprising:
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a transistor on a substrate; a first conductive layer over the transistor; a first organic compound layer over the first conductive layer; a second organic compound layer over the first conductive layer; a first insulating layer on the first conductive layer, the first insulating layer interposed between the first organic compound layer and the second organic compound layer; a second conductive layer on the first organic compound layer; a third conductive layer on the second organic compound layer; and a second insulating layer on the second conductive layer, the third conductive layer, and the first insulating layer. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39)
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Specification