TRENCH DMOS DEVICE WITH IMPROVED TERMINATION STRUCTURE FOR HIGH VOLTAGE APPLICATIONS
First Claim
1. A termination structure for a power transistor, said termination structure comprising:
- a semiconductor substrate having an active region and a termination region, the substrate having a first type of conductivity;
a termination trench located in the termination region and extending from a boundary of the active region toward an edge of the semiconductor substrate;
a doped region having a second type of conductivity disposed in the substrate below the termination trench;
a MOS gate formed on a sidewall adjacent the boundary, wherein the doped region extends from below a portion of the MOS gate toward the edge of the semiconductor substrate;
a termination structure oxide layer formed on the termination trench covering a portion of the MOS gate and extending toward the edge of the substrate;
a first conductive layer formed on a backside surface of the semiconductor substrate; and
a second conductive layer formed atop the active region, an exposed portion of the MOS gate, and extending to cover a portion of the termination structure oxide layer.
1 Assignment
0 Petitions
Accused Products
Abstract
A termination structure is provided for a power transistor. The termination structure includes a semiconductor substrate having an active region and a termination region. The substrate has a first type of conductivity. A termination trench is located in the termination region and extends from a boundary of the active region toward an edge of the semiconductor substrate. A doped region having a second type of conductivity is disposed in the substrate below the termination trench. A MOS gate is formed on a sidewall adjacent the boundary. The doped region extends from below a portion of the MOS gate spaced apart from the boundary toward the edge of the semiconductor substrate. A termination structure oxide layer is formed on the termination trench covering a portion of the MOS gate and extends toward the edge of the substrate. A first conductive layer is formed on a backside surface of the semiconductor substrate and a second conductive layer is formed atop the active region, an exposed portion of the MOS gate, and extends to cover a portion of the termination structure oxide layer.
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Citations
18 Claims
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1. A termination structure for a power transistor, said termination structure comprising:
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a semiconductor substrate having an active region and a termination region, the substrate having a first type of conductivity; a termination trench located in the termination region and extending from a boundary of the active region toward an edge of the semiconductor substrate; a doped region having a second type of conductivity disposed in the substrate below the termination trench; a MOS gate formed on a sidewall adjacent the boundary, wherein the doped region extends from below a portion of the MOS gate toward the edge of the semiconductor substrate; a termination structure oxide layer formed on the termination trench covering a portion of the MOS gate and extending toward the edge of the substrate; a first conductive layer formed on a backside surface of the semiconductor substrate; and a second conductive layer formed atop the active region, an exposed portion of the MOS gate, and extending to cover a portion of the termination structure oxide layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A Schottky diode, comprising:
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a semiconductor substrate having a plurality of trench MOS devices spaced from each other formed in an active region of the semiconductor substrate, the substrate having a first type of conductivity; a termination trench located in a termination region and extending from a boundary of the active region toward an edge of the semiconductor substrate; a doped region having a second type of conductivity disposed in the substrate below the termination trench; a MOS gate formed on a sidewall adjacent the boundary, wherein the doped region extends from below a portion of the MOS gate toward the edge of the semiconductor substrate; a termination structure oxide layer formed on the termination trench covering a portion of the MOS gate and extending toward the edge of the substrate; a first conductive layer formed on a backside surface of the semiconductor substrate; and a second conductive layer formed atop the active region to define one or more Schottky barriers with one or more portions of the substrate located between adjacent ones of the trench MOS devices; and a field plate extending over an exposed portion of the MOS gate and a portion of the termination structure oxide layer. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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Specification