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SPUTTERING SYSTEM

  • US 20110233049A1
  • Filed: 08/21/2008
  • Published: 09/29/2011
  • Est. Priority Date: 08/30/2007
  • Status: Abandoned Application
First Claim
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1. A device for sputtering at least one selected material onto a substrate and bringing about a reaction of this material, the device comprising a vacuum chamber, in which a substrate holder is arranged, at least one magnetron sputtering mechanism, which is arranged in a workstation close to the substrate holder and which has a target of the selected material which is suitable for producing a first plasma for sputtering at least one material onto the substrate, as well as a secondary plasma mechanism for producing a secondary plasma, which is arranged in the workstation close to the magnetron sputtering mechanism (15) and close to the substrate holder, the sputtering mechanism and the secondary plasma mechanism forming a sputtering zone and an activation zone, wherein at least two electromagnets and/or radially magnetized toric magnets as well as at least one magnetic multipole, which is formed from a plurality of permanent magnets, are arranged to produce magnetic fields to include the secondary plasma.

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