SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

• US 20110233198A1
• Filed: 03/21/2011
• Published: 09/29/2011
• Est. Priority Date: 03/25/2010
• Status: Abandoned Application

• Current Assignee: Hitachi Kokusai Electric Incorporated (Hitachi, Ltd.)
• Original Assignee: Hitachi Kokusai Electric Incorporated (Hitachi, Ltd.)
• Inventors: OKUNO, Masahisa, UMEKAWA, Atsushi
• Application Number:
  US13/052,512
• Publication Number:
  US 20110233198A1
• Time in Patent Office: Days
• US Class Current: 219/651
• CPC Class Codes: H05B 6/806 for laboratory use

Abstract

A substrate processing apparatus and a substrate processing method capable of supplying uniform electromagnetic wave power and performing uniform heating are provided. The substrate processing apparatus includes a process chamber for processing a wafer, a boat installed in the process chamber to hold the wafer, a gas introduction part installed below the wafer held by the boat for introducing a gas toward a back surface of the wafer, and a waveguide port installed over the wafer held by the boat for introducing an electromagnetic wave.

Claims

1. A substrate processing apparatus comprising:

a process chamber for processing a substrate;

a substrate holder installed in the process chamber to hold the substrate;

a gas introduction part installed below the substrate held by the substrate holder for introducing a gas toward a back surface of the substrate; and

an electromagnetic wave introduction part installed over the substrate held by the substrate holder for introducing an electromagnetic wave.

2. The substrate processing apparatus according to claim 1, wherein the substrate holder comprises a ring-shaped reflective part vertically overlapping an edge of the substrate held by the substrate holder and reflecting the electromagnetic wave.

3. The substrate processing apparatus according to claim 1, further comprising a gas exhausting part installed over the substrate held by the substrate processing apparatus for exhausting the gas.

4. The substrate processing apparatus according to claim 3, wherein the gas exhausting part is installed so as not to vertically overlap the substrate held by the substrate holder.

5. The substrate processing apparatus according to claim 3, wherein at least two of the gas exhausting part are installed.

6. The substrate processing apparatus according to claim 1, further comprising a cooling part for cooling a wall surface of the process chamber.