METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
First Claim
1. A method for manufacturing a semiconductor device, comprising the steps of:
- forming a gate electrode over an insulating surface;
forming a gate insulating film over the gate electrode;
forming an oxide semiconductor film overlapping with the gate electrode with the gate insulating film provided therebetween;
forming a source electrode and a drain electrode over the oxide semiconductor film;
forming a metal oxide film being in contact with the oxide semiconductor film over the source electrode and the drain electrode;
introducing a halogen element to at least one of the oxide semiconductor film, the metal oxide film, and an interface between the oxide semiconductor film and the metal oxide film;
forming an insulating film over the metal oxide film; and
performing a heat treatment on the oxide semiconductor film.
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Accused Products
Abstract
One object is to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. In a transistor including an oxide semiconductor film, a metal oxide film having a function of preventing electrification which is in contact with the oxide semiconductor film and covers a source electrode and a drain electrode is formed. Then, a halogen element is introduced (added) to at least one of the oxide semiconductor film, the metal oxide film and an interface therebetween via the metal oxide film and heat treatment is performed. Through these steps, impurities such as hydrogen, moisture, a hydroxyl group, or hydride are intentionally removed from the oxide semiconductor film, so that the oxide semiconductor film is highly purified. Further, by providing the metal oxide film, generation of a parasitic channel on a back channel side of the oxide semiconductor film can be prevented in the transistor.
138 Citations
17 Claims
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1. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode over an insulating surface; forming a gate insulating film over the gate electrode; forming an oxide semiconductor film overlapping with the gate electrode with the gate insulating film provided therebetween; forming a source electrode and a drain electrode over the oxide semiconductor film; forming a metal oxide film being in contact with the oxide semiconductor film over the source electrode and the drain electrode; introducing a halogen element to at least one of the oxide semiconductor film, the metal oxide film, and an interface between the oxide semiconductor film and the metal oxide film; forming an insulating film over the metal oxide film; and performing a heat treatment on the oxide semiconductor film. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode over an insulating surface; forming a gate insulating film over the gate electrode; forming an oxide semiconductor film overlapping with the gate electrode with the gate insulating film provided therebetween; forming a source electrode and a drain electrode over the oxide semiconductor film; forming a metal oxide film being in contact with the oxide semiconductor film over the source electrode and the drain electrode; forming an insulating film over the metal oxide film; introducing a halogen element to at least one of the oxide semiconductor film, the metal oxide film, and an interface between the oxide semiconductor film and the metal oxide film; and performing a heat treatment on the oxide semiconductor film. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A semiconductor device comprising:
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a gate electrode; a gate insulating film over the gate electrode; an oxide semiconductor film overlapping with the gate electrode over the gate insulating film, the oxide semiconductor film including a halogen element; a source electrode and a drain electrode being in contact with the oxide semiconductor film; a metal oxide film being in contact with the oxide semiconductor film and over the source electrode and the drain electrode; and an insulating film provided over the metal oxide film. - View Dependent Claims (14, 15, 16, 17)
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Specification
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- Resources
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsYamazaki, Shunpei
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Application NumberUS13/071,826Publication NumberTime in Patent OfficeDaysField of SearchUS Class Current257/43CPC Class CodesH01L 27/1225 with semiconductor material...H01L 29/7869 having a semiconductor body...
