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METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

  • US 20110233542A1
  • Filed: 03/25/2011
  • Published: 09/29/2011
  • Est. Priority Date: 03/26/2010
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a gate electrode;

    a gate insulating film which covers the gate electrode;

    a semiconductor film comprising an oxide semiconductor, wherein a region of the semiconductor film overlaps with the gate electrode;

    a source electrode and a drain electrode which are in contact with the semiconductor film;

    a metal oxide film which is in contact with the semiconductor film and covers the source electrode and the drain electrode; and

    an insulating film which covers the metal oxide film.

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