Semiconductor Memory Device and Method of Manufacturing the Same
First Claim
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1. A non-volatile memory device comprising:
- a substrate;
at least two gate structures on the substrate; and
at least one impurity region that is at least partially disposed in a portion of the substrate between the at least two gate structures;
wherein a center of the at least one impurity region is horizontally offset from a center of a region between the at least two gate structures.
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Abstract
A non-volatile memory device and a method of manufacturing the non-volatile memory device are disclosed. The non-volatile memory device includes a substrate, at least two gate structures on the substrate, and at least one impurity region in portions of the substrate between the at least two gate structures. The center of the at least one impurity region is horizontally offset from the center of a region between the at least two gate structures.
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Citations
28 Claims
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1. A non-volatile memory device comprising:
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a substrate; at least two gate structures on the substrate; and at least one impurity region that is at least partially disposed in a portion of the substrate between the at least two gate structures; wherein a center of the at least one impurity region is horizontally offset from a center of a region between the at least two gate structures. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12-23. -23. (canceled)
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24. A non-volatile memory device comprising:
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a semiconductor layer; a pair of gate structures on the semiconductor layer and defining a region of the semiconductor layer between the pair of gate structures; and an impurity region in the semiconductor layer, wherein the impurity region is at least partially disposed in the region of the semiconductor layer between the pair of gate structures and comprises a source/drain region for both of the pair of gate structures; wherein a center of the impurity region is horizontally offset from a center of the region of the semiconductor layer between the pair of gate structures. - View Dependent Claims (25, 26, 27, 28)
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Specification