×

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

  • US 20110233637A1
  • Filed: 03/21/2011
  • Published: 09/29/2011
  • Est. Priority Date: 03/23/2010
  • Status: Abandoned Application
First Claim
Patent Images

1. A method for manufacturing a semiconductor device, the method comprising:

  • forming a first insulating film on a semiconductor substrate;

    processing the first insulating film into a predetermined pattern;

    forming a first gate electrode structure on the first insulating film, the first gate electrode structure having a smaller width than that of the processed first insulating film in a channel length direction;

    introducing a first impurity of a first conductivity type into the semiconductor substrate via the processed first insulting film using the first gate electrode structure as a mask; and

    introducing a second impurity of the first conductivity type into the semiconductor substrate using the first gate electrode structure and the first insulating film as a mask.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×