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Three-Dimensional Semiconductor Memory Devices And Methods Of Fabricating The Same

  • US 20110233648A1
  • Filed: 03/25/2011
  • Published: 09/29/2011
  • Est. Priority Date: 03/26/2010
  • Status: Active Grant
First Claim
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1. A three-dimensional semiconductor device, comprising:

  • an electrode structure including a stacked plurality of electrodes on a substrate;

    a plurality of semiconductor patterns penetrating the electrode structure; and

    a plurality of memory elements between the semiconductor patterns and the electrode structure, the memory elements including a first pattern extending in a first direction to cross the plurality of electrodes and a second pattern extending in a second direction orthogonal to the first direction to cross the plurality of semiconductor patterns.

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