SEMICONDUCTOR COMPONENT AND METHODS FOR PRODUCING A SEMICONDUCTOR COMPONENT

• US 20110233721A1
• Filed: 06/09/2011
• Published: 09/29/2011
• Est. Priority Date: 06/28/2006
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Gruber, Hermann, Gross, Thomas, Meiser, Andreas, Hartner, Walter, Bonart, Dietrich
• Granted Patent: US 8,476,734 B2
• Time in Patent Office: Days
• US Class Current: 257/520
• CPC Class Codes: H01L 21/76286 Lateral isolation by refilling of trenches with polycristalline material
• CPC Class Codes: H01L 21/76802 by forming openings in dielectrics
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material
• CPC Class Codes: H01L 21/84 the substrate being other than a semiconductor body, e.g. being an insulating body
• CPC Class Codes: H01L 27/1203 the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688

Abstract

A semiconductor component includes a semiconductor body, in which are formed: a substrate of a first conduction type, a buried semiconductor layer of a second conduction type arranged on the substrate, and a functional unit semiconductor layer of a third conduction type arranged on the buried semiconductor layer, in which at least two semiconductor functional units arranged laterally alongside one another are provided. The buried semiconductor layer is part of at least one semiconductor functional unit, the semiconductor functional units being electrically insulated from one another by an isolation structure which permeates the functional unit semiconductor layer, the buried semiconductor layer, and the substrate. The isolation structure includes at least one trench and an electrically conductive contact to the substrate, the contact to the substrate being electrically insulated from the functional unit semiconductor layer and the buried layer by the at least one trench.

Claims

1. A semiconductor component, with a semiconductor body, comprising:

a substrate of a first conduction type;

a buried semiconductor layer of a second conduction type arranged on the substrate; and

a functional unit semiconductor layer of a third conduction type arranged on the buried semiconductor layer, in which at least two semiconductor functional units are arranged laterally alongside one another are provided;

wherein the buried semiconductor layer is a part of at least one semiconductor functional unit, and the semiconductor functional units are electrically insulated from one another by an isolation structure which permeates the functional unit semiconductor layer, the buried semiconductor layer and the substrate;

wherein the isolation structure comprises at least one trench and an electrically conductive contact to the substrate, the electrically conductive contact to the substrate being electrically insulated from the functional unit semiconductor layer and the buried layer by the at least one trench; and

wherein the isolation structure comprises two trenches and a semiconducting zone of the first conduction type situated between the trenches.

2. The semiconductor component of claim 1, wherein the semiconducting zone comprises a buried layer of the first conduction type and a doped region of the first conduction type.

3. The semiconductor component of claim 2, wherein a vertical extent of the buried layer of the first conduction type is higher compared with the buried layer of the second conduction type.

4. The semiconductor component of claim 1, wherein the semiconducting zone includes one semiconductor region that

reaches a surface of the functional unit semiconductor layer, and

forms a low-impedance contact to the substrate.

5. The semiconductor component of claim 1, wherein the trenches are filled with an insulating material.

6. The semiconductor component of claim 5, wherein the trenches are completely filled with TEOS.

7. A semiconductor component, with a semiconductor body, comprising:

a substrate of a first conduction type;

a buried semiconductor layer of a second conduction type arranged on the substrate; and

a functional unit semiconductor layer of a third conduction type arranged on the buried semiconductor layer, in which at least two semiconductor functional units are arranged laterally alongside one another are provided;

wherein the buried semiconductor layer is a part of at least one semiconductor functional unit, and the semiconductor functional units are electrically insulated from one another by an isolation structure which permeates the functional unit semiconductor layer, the buried semiconductor layer and the substrate;

wherein the isolation structure comprises at least one trench and an electrically conductive contact to the substrate, the electrically conductive contact to the substrate being electrically insulated from the functional unit semiconductor layer and the buried layer by the at least one trench; and

wherein the isolation structure comprises two trenches and a semiconducting zone of the first conduction type situated between the trenches, the semiconducting zone comprising a buried layer of the first conduction type and a doped region of the first conduction type.

8. The semiconductor component of claim 7, wherein a vertical extent of the buried layer of the first conduction type is higher compared with the buried layer of the second conduction type.

9. The semiconductor component of claim 7, wherein the trenches are filled with an insulating material.

10. The semiconductor component of claim 9, wherein the trenches are completely filled with TEOS.

11. A semiconductor component, with a semiconductor body, comprising:

a substrate of a first conduction type;

a buried semiconductor layer of a second conduction type arranged on the substrate; and

a functional unit semiconductor layer of a third conduction type arranged on the buried semiconductor layer, in which at least two semiconductor functional units are arranged laterally alongside one another are provided;

wherein the buried semiconductor layer is a part of at least one semiconductor functional unit, and the semiconductor functional units are electrically insulated from one another by an isolation structure which permeates the functional unit semiconductor layer, the buried semiconductor layer and the substrate;

wherein the isolation structure comprises at least one trench and an electrically conductive contact to the substrate, the electrically conductive contact to the substrate being electrically insulated from the functional unit semiconductor layer and the buried layer by the at least one trench; and

wherein the isolation structure comprises two trenches and a semiconducting zone of the first conduction type situated between the trenches, the semiconducting zone including one semiconductor region that

reaches a surface of the functional unit semiconductor layer, and

forms a low-impedance contact to the substrate.

12. The semiconductor component of claim 11, wherein the trenches are filled with an insulating material.

13. The semiconductor component of claim 12, wherein the trenches are completely filled with TEOS.