CU PILLAR BUMP WITH NON-METAL SIDEWALL PROTECTION STRUCTURE

• US 20110233761A1
• Filed: 03/24/2010
• Published: 09/29/2011
• Est. Priority Date: 07/30/2009
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Wang, Chun-Chieh, Hwang, Chien Ling, Wu, Yi-Wen, Liu, Chung-Shi
• Granted Patent: US 8,841,766 B2
• Time in Patent Office: Days
• US Class Current: 257/737
• CPC Class Codes: H01L 21/76885 By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
• CPC Class Codes: H01L 2224/023 Redistribution layers [RDL] for bonding areas
• CPC Class Codes: H01L 2224/0345 Physical vapour deposition [PVD], e.g. evaporation, or sputtering
• CPC Class Codes: H01L 2224/0361 Physical or chemical etching
• CPC Class Codes: H01L 2224/03614 by chemical means only
• CPC Class Codes: H01L 2224/03901 with repetition of the same manufacturing step
• CPC Class Codes: H01L 2224/03912 the bump being used as a mask for patterning the bonding area
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05016 in side view
• CPC Class Codes: H01L 2224/05024 the internal layer being disposed on a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05073 Single internal layer
• CPC Class Codes: H01L 2224/05166 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05181 Tantalum [Ta] as principal constituent
• CPC Class Codes: H01L 2224/05187 Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2224/05578 being disposed next to each other, e.g. side-to-side arrangements
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/0569 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/10126 Bump collar
• CPC Class Codes: H01L 2224/1132 Screen printing, i.e. using a stencil
• CPC Class Codes: H01L 2224/1145 Physical vapour deposition [PVD], e.g. evaporation, or sputtering
• CPC Class Codes: H01L 2224/11452 : Chemical vapour deposition [CVD], e.g. laser CVD
• CPC Class Codes: H01L 2224/1146 : Plating
• CPC Class Codes: H01L 2224/11462 : Electroplating
• CPC Class Codes: H01L 2224/11464 : Electroless plating
• CPC Class Codes: H01L 2224/1147 : using a lift-off mask
• CPC Class Codes: H01L 2224/11614 : by chemical means only
• CPC Class Codes: H01L 2224/1182 : Applying permanent coating, e.g. in-situ coating
• CPC Class Codes: H01L 2224/11827 : Chemical vapour deposition [CVD], e.g. laser CVD
• CPC Class Codes: H01L 2224/11849 : Reflowing
• CPC Class Codes: H01L 2224/11901 : with repetition of the same manufacturing step
• CPC Class Codes: H01L 2224/11912 : the bump being used as a mask for patterning other parts
• CPC Class Codes: H01L 2224/13099 : Material
• CPC Class Codes: H01L 2224/13147 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/13561 : On the entire surface of the core, i.e. integral coating
• CPC Class Codes: H01L 2224/13562 : On the entire exposed surface of the core
• CPC Class Codes: H01L 2224/13564 : Only on the bonding interface of the bump connector
• CPC Class Codes: H01L 2224/13565 : Only outside the bonding interface of the bump connector
• CPC Class Codes: H01L 2224/13582 : Two-layer coating
• CPC Class Codes: H01L 2224/13583 : Three-layer coating
• CPC Class Codes: H01L 2224/13609 : Indium [In] as principal constituent
• CPC Class Codes: H01L 2224/13611 : Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/13639 : Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/13644 : Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/13647 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/13655 : Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/13664 : Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 2224/1369 : with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/16238 : the bump connector connecting to a bonding area protruding from the surface of the item
• CPC Class Codes: H01L 2224/81024 : Applying flux to the bonding area
• CPC Class Codes: H01L 2224/81191 : wherein the bump connectors are disposed only on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/814 : with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/81411 : Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/81413 : Bismuth [Bi] as principal constituent
• CPC Class Codes: H01L 2224/81416 : Lead [Pb] as principal constituent
• CPC Class Codes: H01L 2224/81439 : Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/81447 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/81455 : Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/81815 : Reflow soldering
• CPC Class Codes: H01L 24/03 : Manufacturing methods
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/11 : Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01007 : Nitrogen [N]
• CPC Class Codes: H01L 2924/01012 : Magnesium [Mg]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01025 : Manganese [Mn]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01032 : Germanium [Ge]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01038 : Strontium [Sr]
• CPC Class Codes: H01L 2924/0104 : Zirconium [Zr]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01051 : Antimony [Sb]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01083 : Bismuth [Bi]
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/04941 : TiN
• CPC Class Codes: H01L 2924/04953 : TaN
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/206 : Length ranges
• CPC Class Codes: H01L 2924/2064 : larger or equal to 1 micron less than 100 microns
• CPC Class Codes: H01L 2924/20641 : larger or equal to 100 microns less than 200 microns
• CPC Class Codes: H01L 2924/20642 : larger or equal to 200 microns less than 300 microns

Abstract

Sidewall protection processes are provided for Cu pillar bump technology, in which a protection structure on the sidewalls of the Cu pillar bump is formed of at least one of non-metal material layers, for example a dielectric material layer, a polymer material layer, or combinations thereof.

Claims

1. An integrated circuit device, comprising:

a semiconductor substrate;

a first under-bump-metallurgy (UBM) layer formed on the semiconductor substrate;

a second UBM layer formed on the first UBM layer and having a sidewall surface;

a conductive pillar formed on the second UBM layer, and having a sidewall surface and a top surface; and

a protection structure formed on the sidewall surface of the conductive pillar and the sidewall surface of the second UBM layer;

wherein the protection structure is formed of a non-metal material, and the conductive pillar is formed of a copper-containing layer.

2. The integrated circuit device of claim 1, wherein the protection structure comprises a silicon nitride layer.

3. The integrated circuit device of claim 1, wherein the protection structure comprises a polyimide layer.

4. The integrated circuit device of claim 1, wherein the protection structure comprises a dielectric layer, a polymer layer, or combinations thereof.

5. The integrated circuit device of claim 1, wherein the first UBM layer comprises a peripheral surface not covered by the second UBM layer.

6. The integrated circuit device of claim 5, wherein the protection structure is formed on the peripheral surface of the first UBM layer.

7. The integrated circuit device of claim 1, further comprising a barrier layer formed between the conductive pillar and the protection structure, wherein the barrier layer is a copper-containing material layer comprising germanium (Ge).

8. The integrated circuit device of claim 7, wherein the barrier layer is formed on the top surface of the conductive pillar.

9. The integrated circuit device of claim 1, further comprising a cap layer on the top surface of the conductive pillar.

10. The integrated circuit device of claim 9, wherein the cap layer comprises a Ni layer on the top surface of the conductive pillar, and an Au layer on the Ni layer.

11. The integrated circuit device of claim 9, further comprising a solder layer formed on the cap layer.

12. The integrated circuit device of claim 9, wherein the protection structure covers at least a portion of the sidewall surface of the cap layer.

13. The integrated circuit device of claim 1, wherein the first UBM layer comprises titanium, and the second UBM layer comprises copper.

14. An integrated circuit device, comprising:

a semiconductor substrate;

a bump structure formed on the semiconductor substrate; and

a non-metal protection structure covering at least a portion of the sidewall of the bump structure,

wherein the bump structure comprises an under-bump-metallurgy (UBM) layer formed on the semiconductor substrate, and a copper pillar formed on the UBM layer.

15. The integrated circuit device of claim 14, wherein the non-metal protection structure comprises a silicon nitride layer, a polyimide layer, or combinations thereof.

16. The integrated circuit device of claim 14, further comprising a barrier layer formed between the bump structure and the non-metal protection structure, wherein the barrier layer comprises copper and germanium (Ge).

17. The integrated circuit device of claim 14, wherein the bump structure comprises a Ni layer on the copper pillar, and an Au layer on the Ni layer.

18. The integrated circuit device of claim 14, wherein the bump structure comprises a Ni layer on the copper pillar, and a solder layer on the Ni layer.

19. A packaging assembly, comprising:

a first substrate;

a bump structure formed on the first substrate, wherein the bump structure comprises an under-bump-metallurgy (UBM) layer formed on the first substrate, and a copper pillar formed on the UBM layer;

a non-metal protection structure covering at least a portion of the sidewall of the bump structure;

a second substrate; and

a joint solder layer formed between the second substrate and the bump structure.

20. The packaging assembly of claim 19, wherein the non-metal protection structure comprises a silicon nitride layer, a polyimide layer, or combinations thereof.