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CU PILLAR BUMP WITH NON-METAL SIDEWALL PROTECTION STRUCTURE

  • US 20110233761A1
  • Filed: 03/24/2010
  • Published: 09/29/2011
  • Est. Priority Date: 07/30/2009
  • Status: Active Grant
First Claim
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1. An integrated circuit device, comprising:

  • a semiconductor substrate;

    a first under-bump-metallurgy (UBM) layer formed on the semiconductor substrate;

    a second UBM layer formed on the first UBM layer and having a sidewall surface;

    a conductive pillar formed on the second UBM layer, and having a sidewall surface and a top surface; and

    a protection structure formed on the sidewall surface of the conductive pillar and the sidewall surface of the second UBM layer;

    wherein the protection structure is formed of a non-metal material, and the conductive pillar is formed of a copper-containing layer.

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