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Semiconductor Device And Method Of Fabricating The Same

  • US 20110237062A1
  • Filed: 03/23/2011
  • Published: 09/29/2011
  • Est. Priority Date: 03/24/2010
  • Status: Active Grant
First Claim
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1. A method of fabricating semiconductor device, the method comprising:

  • forming an interlayer dielectric on a substrate, the interlayer dielectric including first and second openings respectively disposed in first and second regions formed separately in the substrate;

    forming a first conductive layer filling the first and second openings;

    etching the first conductive layer such that a bottom surface of the first opening is exposed and a portion of the first conductive layer in the second opening remains; and

    forming a second conductive layer filling the first opening and a portion of the second opening.

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