×

THIN FILM TRANSISTOR, AND METHOD OF MANUFACTURING THE SAME

  • US 20110240987A1
  • Filed: 03/16/2011
  • Published: 10/06/2011
  • Est. Priority Date: 04/06/2010
  • Status: Active Grant
First Claim
Patent Images

1. A thin film transistor, comprising:

  • a first gate electrode;

    an active layer comprising a crystalline oxide semiconductor being insulated from the first gate electrode by a first insulating layer, the active layer being arranged to overlap the first gate electrode; and

    a source electrode and a drain electrode spaced apart from the source electrode,wherein the source electrode and the drain electrode are insulated from the first gate electrode by the first insulating layer, andwherein at least a portion of the source electrode overlaps with the active layer, and at least a portion of the drain electrode overlaps with the active layer.

View all claims
  • 2 Assignments
Timeline View
Assignment View
    ×
    ×