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SEMICONDUCTOR DEVICE

  • US 20110240995A1
  • Filed: 03/29/2011
  • Published: 10/06/2011
  • Est. Priority Date: 04/02/2010
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a gate electrode;

    a gate insulating film over the gate electrode;

    a metal oxide film over the gate insulating film;

    an oxide semiconductor film in contact with the metal oxide film;

    a source electrode and a drain electrode over the oxide semiconductor film; and

    an insulating film provided over the oxide semiconductor film, the source electrode, and the drain electrode.

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