OPTOELECTRONIC DEVICE AND METHOD FOR PRODUCING THE SAME
First Claim
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1. An optoelectronic device, comprising:
- a first electrode;
one or more first transition metal oxide layers, arranged on the first electrode;
an active layer arranged on the one or more first transition metal oxide layers;
one or more second transition metal oxide layers, arranged on the active layer, wherein the one or more second transition metal oxide layers comprise a nickel oxide (NiO) layer and/or a copper oxide (CuO) layer; and
a second electrode, arranged on the one or more second transition metal oxide layers.
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Abstract
Embodiments of this invention disclose optoelectronic devices and their producing methods. The embodiments employ solution processes to produce p-type transition metal oxide layer, active layer, and n-type transition metal oxide layer of the optoelectronic devices. The p-type transition metal oxide layer comprises a copper oxide (CuO) layer or a nickel oxide (NiO) layer or a mixing layer, which comprises CuO or NiO mixed with an n-type transition metal oxide.
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Citations
38 Claims
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1. An optoelectronic device, comprising:
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a first electrode; one or more first transition metal oxide layers, arranged on the first electrode; an active layer arranged on the one or more first transition metal oxide layers; one or more second transition metal oxide layers, arranged on the active layer, wherein the one or more second transition metal oxide layers comprise a nickel oxide (NiO) layer and/or a copper oxide (CuO) layer; and a second electrode, arranged on the one or more second transition metal oxide layers. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. An optoelectronic device, comprising:
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a first electrode; a transition metal oxide layer, arranged on the first electrode; an active layer, arranged on the transition metal oxide layer; a transition metal oxide mixing layer, arranged on the active layer, wherein the transition metal oxide mixing layer comprises two or more metal oxides comprising CuO and/or NiO mixed with at least an n-type transition metal oxide; and a second electrode arranged on the transition metal oxide mixing layer. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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26. A method for producing an optoelectronic device, comprising the steps of
forming a first electrode; -
coating then drying one or more first solutions on the first electrode in sequence, thus forming one or more first transition metal oxide layers on the first electrode; coating then drying a second solution on the one or more first transition metal oxide layers, thus forming an active layer on the one or more first transition metal oxide layers; coating then drying one or more third solutions on the active layers in sequence, thus forming one or more second transition metal oxide layers on the active layer; and forming a second electrode on the one or more second transition metal oxide layers. - View Dependent Claims (27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38)
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Specification