HIGH EFFICIENCY LIGHT EMITTING DIODE AND METHOD FOR FABRICATING THE SAME
First Claim
1. A light emitting diode (LED) comprising:
- a support substrate;
a semiconductor stack disposed on the support substrate, the semiconductor stack comprising a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer, the p-type compound semiconductor layer being disposed closer to the support substrate than the n-type compound semiconductor layer, the semiconductor stack having an opening that divides the p-type compound semiconductor layer and active layer and exposes a portion of the n-type compound semiconductor layer;
an insulating layer disposed on the exposed portion of the n-type compound semiconductor layer and a sidewall of the opening;
a transparent electrode layer disposed in ohmic-contact with the p-type compound semiconductor layer and covering the insulating layer and the p-type compound semiconductor layer;
a reflective insulating layer covering the transparent electrode layer, to reflect light is emitted from the active layer away from the support substrate;
a p-electrode covering the reflective insulating layer; and
an n-electrode disposed on the upper surface of the n-type compound semiconductor layer,wherein the p-electrode is electrically connected to the transparent electrode layer through an opening formed in the reflective insulating layer.
2 Assignments
0 Petitions
Accused Products
Abstract
A high-efficiency light emitting diode including: a semiconductor stack positioned on a support substrate, including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; an insulating layer disposed in an opening that divides the p-type compound semiconductor layer and active layer; a transparent electrode layer disposed on the insulating layer and the p-type compound semiconductor layer; a reflective insulating layer covering the transparent electrode layer, to reflect light from the active layer away from the support substrate; a p-electrode covering the reflective insulating layer; and an n-electrode is formed on top of the n-type compound semiconductor layer. The p-electrode is electrically connected to the transparent electrode layer through the insulating layer.
-
Citations
27 Claims
-
1. A light emitting diode (LED) comprising:
-
a support substrate; a semiconductor stack disposed on the support substrate, the semiconductor stack comprising a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer, the p-type compound semiconductor layer being disposed closer to the support substrate than the n-type compound semiconductor layer, the semiconductor stack having an opening that divides the p-type compound semiconductor layer and active layer and exposes a portion of the n-type compound semiconductor layer; an insulating layer disposed on the exposed portion of the n-type compound semiconductor layer and a sidewall of the opening; a transparent electrode layer disposed in ohmic-contact with the p-type compound semiconductor layer and covering the insulating layer and the p-type compound semiconductor layer; a reflective insulating layer covering the transparent electrode layer, to reflect light is emitted from the active layer away from the support substrate; a p-electrode covering the reflective insulating layer; and an n-electrode disposed on the upper surface of the n-type compound semiconductor layer, wherein the p-electrode is electrically connected to the transparent electrode layer through an opening formed in the reflective insulating layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
-
-
16. A method of fabricating a light emitting diode (LED), comprising:
-
growing an n-type compound semiconductor layer, an active layer, and a p-type compound semiconductor layer on a growth substrate; forming an opening in the p-type compound semiconductor layer and the active layer to expose a portion of the n-type compound semiconductor layer; forming an insulating layer on the exposed portion of the n-type compound semiconductor layer and on a sidewall of the opening; forming a transparent electrode layer on the insulating layer and the p-type compound semiconductor layer; forming a reflective insulating layer on the transparent electrode layer; removing a portion of the reflective insulating layer to expose a portion of the transparent electrode layer; forming a p-electrode on the reflective insulating layer; bonding a support substrate to the p-electrode using a bonding metal; and removing the growth substrate, wherein the p-electrode is electrically connected to the exposed portion of the transparent electrode layer. - View Dependent Claims (17)
-
-
18. A light emitting diode (LED) comprising:
-
a support substrate; a semiconductor stack disposed on the support substrate and having an upper surface that faces away from the substrate, the semiconductor stack comprising a p-type compound semiconductor layer, active layer, and an n-type compound semiconductor layer; a first electrode disposed between the support substrate and the semiconductor stack, in ohmic-contact with the semiconductor stack, and extending outside of the semiconductor stack; a first bonding pad disposed on the portion of the first electrode that is disposed outside of the semiconductor stack, the first bonding pad being electrically connected to the first electrode; and a second electrode positioned on the upper surface of the semiconductor stack, wherein first protrusions are formed on the upper surface of the semiconductor stack, and a dielectric material is disposed on the upper surface, covering the first protrusions. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26, 27)
-
Specification