Dual Gate LDMOS Device with Reduced Capacitance
First Claim
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1. A transistor comprising:
- an n-well implanted in a substrate;
a source region including a p-body region in the n-well, and a n+ region and a p+ region in the p-body region;
a drain region including a n+ region; and
a dual gate between the source region and the drain region, the dual gate including a first gate on a side closer to the source region and a second gate on a side closer to the drain region, the first gate separated from the second gate by a pre-determined distance sufficient that a capacitance between the gate and the drain is at least 15% lower than a capacitance of a transistor of the same unit cell size and configuration excepting that the first gate and second gate abut.
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Abstract
A transistor includes an n-well implanted in a substrate, a source region including a p-body region in the n-well, and a n+ region and a p+ region in the p-body region, a drain region including a n+ region, and a dual gate between the source region and the drain region. The dual gate includes a first gate on a side closer to the source region and a second gate on a side closer to the drain region, the first gate separated from the second gate by a pre-determined distance sufficient that a capacitance between the gate and the drain is at least 15% lower than a capacitance of a transistor of the same unit cell size and configuration excepting that the first gate and second gate abut.
37 Citations
26 Claims
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1. A transistor comprising:
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an n-well implanted in a substrate; a source region including a p-body region in the n-well, and a n+ region and a p+ region in the p-body region; a drain region including a n+ region; and a dual gate between the source region and the drain region, the dual gate including a first gate on a side closer to the source region and a second gate on a side closer to the drain region, the first gate separated from the second gate by a pre-determined distance sufficient that a capacitance between the gate and the drain is at least 15% lower than a capacitance of a transistor of the same unit cell size and configuration excepting that the first gate and second gate abut. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A transistor comprising:
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an n-well implanted in a substrate; a source region including a p-body region in the n-well, and a n+ region and a p+ region in the p-body region; a drain region including a n+ region; and a dual gate between the source region and the drain region, the dual gate including a first gate on a side closer to the source region and a second gate on a side closer to the drain region, the first gate separated from the second gate by a pre-determined distance, the first gate coupled to a first electrode that is held at a first voltage or floated during an off-state of the transistor and the second gate coupled to a second electrode that is floated or held at a different, second voltage during an on-state of the transistor. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
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Specification