RESISTIVE MEMORY AND METHOD FOR CONTROLLING OPERATIONS OF THE SAME
First Claim
1. A method for controlling operations of a resistive memory, the resistive memory having a first memory layer, a second memory layer and a medium layer formed between the first memory layer and the second memory layer, the method comprising at least a step of:
- (a) measuring a resistance between the first memory layer and the second memory layer, and determining which one of a first state, a second state and a third state is a state of the resistive memory according to the measured resistance.
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Abstract
A resistive memory and a method for controlling operations of the resistive memory are provided. The resistive memory has a first memory layer, a second memory layer and a medium layer. Each of the first memory layer and the second memory layer is used to store data. The medium layer is formed between the first memory layer and the second memory layer. The method comprises at least a step of measuring a resistance between the first memory layer and the second memory layer, and determining which one of a first state, a second state and a third state is a state of the resistive memory according to the measured resistance.
13 Citations
21 Claims
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1. A method for controlling operations of a resistive memory, the resistive memory having a first memory layer, a second memory layer and a medium layer formed between the first memory layer and the second memory layer, the method comprising at least a step of:
(a) measuring a resistance between the first memory layer and the second memory layer, and determining which one of a first state, a second state and a third state is a state of the resistive memory according to the measured resistance. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A resistive memory, comprising:
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a first solid electrolyte; a second solid electrolyte; and an oxidizable electrode, formed between the first solid electrolyte and the second solid electrolyte; wherein the first solid electrolyte and the second solid electrolyte are made of transition metal oxide or materials containing at least one chalcogenide element. - View Dependent Claims (13, 14, 15)
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16. A resistive memory, comprising:
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a first barrier layer; a second barrier layer; and a metal oxide layer, formed between the first barrier layer and the second barrier layer; wherein a first active region is between the first barrier layer and the metal oxide layer, and a second active region is between the second barrier layer and the metal oxide layer. - View Dependent Claims (17, 18, 19, 20)
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21. A memory device, comprising:
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a first memory layer having M resistive states, M being larger than or equal to 3; a second memory layer having N resistive states; and a medium layer formed between the first and second memory layers, wherein at least (M+N−
1) resistive states of the memory device are distinguishable according to a resistance between the first memory layer and second memory layer.
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Specification