COMPONENT FOR SEMICONDUCTOR PROCESSING APPARATUS AND MANUFACTURING METHOD THEREOF

• US 20110244693A1
• Filed: 06/17/2011
• Published: 10/06/2011
• Est. Priority Date: 06/23/2005
• Status: Abandoned Application

• Current Assignee: Akitake Tamura, Kazuya Dobashi, Teruyuki Hayashi
• Original Assignee: Akitake Tamura, Kazuya Dobashi, Teruyuki Hayashi
• Inventors: Hayashi, Teruyuki, Tamura, Akitake, Dobashi, Kazuya
• Application Number:
  US13/163,305
• Publication Number:
  US 20110244693A1
• Time in Patent Office: Days
• US Class Current: 438/761
• CPC Class Codes: C23C 16/403 of aluminium, magnesium or beryllium
• CPC Class Codes: C23C 16/405 of refractory metals or yttrium
• CPC Class Codes: C23C 16/4404 Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
• CPC Class Codes: C23C 16/4412 Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
• CPC Class Codes: C23C 16/45525 Atomic layer deposition [ALD]
• CPC Class Codes: C23C 16/45561 Gas plumbing upstream of the reaction chamber
• CPC Class Codes: Y10T 428/265 1 mil or less

Abstract

A component for a semiconductor processing apparatus includes a matrix defining a shape of the component, and a protection film covering a predetermined surface of the matrix. The protection film consists essentially of an amorphous oxide of a first element selected from the group consisting of aluminum, silicon, hafnium, zirconium, and yttrium. The protection film has a porosity of less than 1% and a thickness of 1 nm to 10 μm.

Claims

1. A component for a semiconductor processing apparatus, the component comprising:

a matrix defining a shape of the component and having a predetermined surface;

a protection film covering the predetermined surface; and

a covering film covering the protection film;

wherein the protection film is an Atomic Layer Deposition (ALD) film consisting essentially of an amorphous oxide of a first element selected from the group consisting of aluminum, silicon, hafnium, zirconium, and yttrium and having a porosity of less than 1% and a thickness of 1 nm to 10 μ

m, the ALD film being prepared by alternately supplying a first source gas containing the first element and a second source gas containing an oxidation gas a plurality of times, thereby laminating layers produced by Chemical Vapor Deposition (CVD) and having a thickness of an atomic or molecular level, and

wherein the covering film is a thermal spray film consisting essentially of an oxide of a second element selected from the group consisting of aluminum, silicon, hafnium, zirconium, and yttrium, the thermal spray film being prepared by spraying a molten material of an oxide of the second element onto the protection film.

2. The component according to claim 1, wherein the predetermined surface is defined by a metal.

3. The component according to claim 2, wherein the metal is selected from the group consisting of aluminum and stainless steel.

4. The component according to claim 1, wherein the predetermined surface is defined by an underlying film covering a surface of the matrix and consisting essentially of an oxide of a third element selected from the group consisting of boron, magnesium, aluminum, silicon, gallium, chromium, yttrium, zirconium, germanium, tantalum, and neodymium.

5. The component according to claim 4, wherein the underlying film is a film formed by thermal spray.

6. The component according to claim 1, wherein the predetermined surface is a surface treated by a surface roughening process.

7. The component according to claim 1, wherein the matrix defines a shape of a member selected from the group consisting of a sidewall of a process chamber, a manifold that forms a bottom of a process chamber, a deposition shield that covers an internal surface of a process chamber, a focus ring, a gas supply line, and an exhaust line.

8. The component according to claim 1, wherein the first element is aluminum, and the protection film is an Al₂O₃ film having a thickness of 1 nm to 1 μ

m.

9. A method for manufacturing a component used for a semiconductor processing apparatus, the method comprising:

preparing a matrix defining a shape of the component and having a predetermined surface;

forming a protection film covering the predetermined surface; and

forming a covering film covering the protection film,

wherein said forming a protection film is performed by alternately supplying a first source gas containing a first element selected from the group consisting of aluminum, silicon, hafnium, zirconium, and yttrium and a second source gas containing an oxidation gas, thereby laminating layers formed by CVD (Chemical Vapor Deposition) and having a thickness of an atomic or molecular level, such that the protection film is an Atomic Layer Deposition (ALD) film consisting essentially of an amorphous oxide of the first element and having a porosity of less than 1% and a thickness of 1 nm to 10 μ

m, and

wherein said forming a covering film is performed by spraying a molten material of an oxide of a second element selected from the group consisting of aluminum, silicon, hafnium, zirconium, and yttrium onto the protection film, such that the covering film is a thermal spray film consisting essentially of an oxide of the second element.

10. The manufacturing method according to claim 9, wherein the predetermined surface is defined by a metal.

11. The manufacturing method according to claim 10, wherein the metal is selected from the group consisting of aluminum and stainless steel.

12. The manufacturing method according to claim 9, wherein the predetermined surface is defined by an underlying film covering a surface of the matrix and consisting essentially of an oxide of a third element selected from the group consisting of boron, magnesium, aluminum, silicon, gallium, chromium, yttrium, zirconium, germanium, tantalum, and neodymium.

13. The manufacturing method according to claim 12, wherein the underlying film is a film formed by thermal spray.

14. The manufacturing method according to claim 9, wherein the method further comprises performing a surface roughening process on the predetermined surface before said forming a protection film.

15. The manufacturing method according to claim 9, wherein the first element is aluminum, and the protection film is an Al₂O₃ film having a thickness of 1 nm to 1 μ

m.

16. A semiconductor processing apparatus comprising:

a process container having a process field configured to accommodate a target substrate;

a support member configured to support the target substrate within the process field;

an exhaust system configured to exhaust the process field; and

a gas supply system configured to supply a process gas into the process field,

wherein a component forming a part of one of the process field, the exhaust system, and the gas supply system comprises;

a matrix defining a shape of the component and having a predetermined surface,

a protection film covering the predetermined surface, and

a covering film covering the protection film,

wherein the protection film is an Atomic Layer Deposition (ALD) film consisting essentially of an amorphous oxide of a first element selected from the group consisting of aluminum, silicon, hafnium, zirconium, and yttrium and having a porosity of less than 1% and a thickness of 1 nm to 10 μ

m, the ALD film being prepared by alternately supplying a first source gas containing the first element and a second source gas containing an oxidation gas a plurality of times, thereby laminating layers produced by Chemical Vapor Deposition (CVD) and having a thickness of an atomic or molecular level, and

wherein the covering film is a thermal spray film consisting essentially of an oxide of a second element selected from the group consisting of aluminum, silicon, hafnium, zirconium, and yttrium, the thermal spray film being prepared by spraying a molten material of oxide of the second element onto the protection film.

17. The semiconductor processing apparatus according to claim 16, wherein the predetermined surface is defined by a metal.

18. The semiconductor processing apparatus according to claim 17, wherein the metal is selected from the group consisting of aluminum and stainless steel.

19. The semiconductor processing apparatus according to claim 16, wherein the predetermined surface is defined by an underlying film covering a surface of the matrix and consisting essentially of an oxide of a third element selected from the group consisting of boron, magnesium, aluminum, silicon, gallium, chromium, yttrium, zirconium, germanium, tantalum, and neodymium.

20. The semiconductor processing apparatus according to claim 19, wherein the underlying film is a film formed by a thermal spray.