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COMPONENT FOR SEMICONDUCTOR PROCESSING APPARATUS AND MANUFACTURING METHOD THEREOF

  • US 20110244693A1
  • Filed: 06/17/2011
  • Published: 10/06/2011
  • Est. Priority Date: 06/23/2005
  • Status: Abandoned Application
First Claim
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1. A component for a semiconductor processing apparatus, the component comprising:

  • a matrix defining a shape of the component and having a predetermined surface;

    a protection film covering the predetermined surface; and

    a covering film covering the protection film;

    wherein the protection film is an Atomic Layer Deposition (ALD) film consisting essentially of an amorphous oxide of a first element selected from the group consisting of aluminum, silicon, hafnium, zirconium, and yttrium and having a porosity of less than 1% and a thickness of 1 nm to 10 μ

    m, the ALD film being prepared by alternately supplying a first source gas containing the first element and a second source gas containing an oxidation gas a plurality of times, thereby laminating layers produced by Chemical Vapor Deposition (CVD) and having a thickness of an atomic or molecular level, andwherein the covering film is a thermal spray film consisting essentially of an oxide of a second element selected from the group consisting of aluminum, silicon, hafnium, zirconium, and yttrium, the thermal spray film being prepared by spraying a molten material of an oxide of the second element onto the protection film.

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