COMPONENT FOR SEMICONDUCTOR PROCESSING APPARATUS AND MANUFACTURING METHOD THEREOF
First Claim
Patent Images
1. A component for a semiconductor processing apparatus, the component comprising:
- a matrix defining a shape of the component and having a predetermined surface;
a protection film covering the predetermined surface; and
a covering film covering the protection film;
wherein the protection film is an Atomic Layer Deposition (ALD) film consisting essentially of an amorphous oxide of a first element selected from the group consisting of aluminum, silicon, hafnium, zirconium, and yttrium and having a porosity of less than 1% and a thickness of 1 nm to 10 μ
m, the ALD film being prepared by alternately supplying a first source gas containing the first element and a second source gas containing an oxidation gas a plurality of times, thereby laminating layers produced by Chemical Vapor Deposition (CVD) and having a thickness of an atomic or molecular level, andwherein the covering film is a thermal spray film consisting essentially of an oxide of a second element selected from the group consisting of aluminum, silicon, hafnium, zirconium, and yttrium, the thermal spray film being prepared by spraying a molten material of an oxide of the second element onto the protection film.
0 Assignments
0 Petitions
Accused Products
Abstract
A component for a semiconductor processing apparatus includes a matrix defining a shape of the component, and a protection film covering a predetermined surface of the matrix. The protection film consists essentially of an amorphous oxide of a first element selected from the group consisting of aluminum, silicon, hafnium, zirconium, and yttrium. The protection film has a porosity of less than 1% and a thickness of 1 nm to 10 μm.
-
Citations
20 Claims
-
1. A component for a semiconductor processing apparatus, the component comprising:
-
a matrix defining a shape of the component and having a predetermined surface; a protection film covering the predetermined surface; and a covering film covering the protection film; wherein the protection film is an Atomic Layer Deposition (ALD) film consisting essentially of an amorphous oxide of a first element selected from the group consisting of aluminum, silicon, hafnium, zirconium, and yttrium and having a porosity of less than 1% and a thickness of 1 nm to 10 μ
m, the ALD film being prepared by alternately supplying a first source gas containing the first element and a second source gas containing an oxidation gas a plurality of times, thereby laminating layers produced by Chemical Vapor Deposition (CVD) and having a thickness of an atomic or molecular level, andwherein the covering film is a thermal spray film consisting essentially of an oxide of a second element selected from the group consisting of aluminum, silicon, hafnium, zirconium, and yttrium, the thermal spray film being prepared by spraying a molten material of an oxide of the second element onto the protection film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
-
-
9. A method for manufacturing a component used for a semiconductor processing apparatus, the method comprising:
-
preparing a matrix defining a shape of the component and having a predetermined surface; forming a protection film covering the predetermined surface; and forming a covering film covering the protection film, wherein said forming a protection film is performed by alternately supplying a first source gas containing a first element selected from the group consisting of aluminum, silicon, hafnium, zirconium, and yttrium and a second source gas containing an oxidation gas, thereby laminating layers formed by CVD (Chemical Vapor Deposition) and having a thickness of an atomic or molecular level, such that the protection film is an Atomic Layer Deposition (ALD) film consisting essentially of an amorphous oxide of the first element and having a porosity of less than 1% and a thickness of 1 nm to 10 μ
m, andwherein said forming a covering film is performed by spraying a molten material of an oxide of a second element selected from the group consisting of aluminum, silicon, hafnium, zirconium, and yttrium onto the protection film, such that the covering film is a thermal spray film consisting essentially of an oxide of the second element. - View Dependent Claims (10, 11, 12, 13, 14, 15)
-
-
16. A semiconductor processing apparatus comprising:
-
a process container having a process field configured to accommodate a target substrate; a support member configured to support the target substrate within the process field; an exhaust system configured to exhaust the process field; and a gas supply system configured to supply a process gas into the process field, wherein a component forming a part of one of the process field, the exhaust system, and the gas supply system comprises; a matrix defining a shape of the component and having a predetermined surface, a protection film covering the predetermined surface, and a covering film covering the protection film, wherein the protection film is an Atomic Layer Deposition (ALD) film consisting essentially of an amorphous oxide of a first element selected from the group consisting of aluminum, silicon, hafnium, zirconium, and yttrium and having a porosity of less than 1% and a thickness of 1 nm to 10 μ
m, the ALD film being prepared by alternately supplying a first source gas containing the first element and a second source gas containing an oxidation gas a plurality of times, thereby laminating layers produced by Chemical Vapor Deposition (CVD) and having a thickness of an atomic or molecular level, andwherein the covering film is a thermal spray film consisting essentially of an oxide of a second element selected from the group consisting of aluminum, silicon, hafnium, zirconium, and yttrium, the thermal spray film being prepared by spraying a molten material of oxide of the second element onto the protection film. - View Dependent Claims (17, 18, 19, 20)
-
Specification