Trench mosfet with body region having concave-arc shape
First Claim
1. A trench MOSFET (Metal Oxide Semiconductor Field Effect Transistor) comprising:
- a substrate of a first conductivity doping type;
an epitaxial layer of said first conductivity doping type over said substrate;
a plurality of trenched gates;
a plurality of source regions of said first conductivity doping type surrounding top portion of said trenched gates, said source regions have higher doping concentration than said substrate;
a plurality of body regions of a second conductivity doping type encompassing said source regions, said body regions have concave-arc shape with respect to top surface of said epitaxial layer;
a plurality of trenched source-body contacts; and
a plurality of body ohmic contact doped regions of said second conductivity doping type surrounding at least bottoms of said trenched source-body contacts.
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Abstract
A trench Metal Oxide Semiconductor Field Effect Transistor with improved body region structures is disclosed. By forming the inventive body region structures with concave-arc shape with respect to epitaxial layer, a wider interfaced area between the body region and the epitaxial layer is achieved, thus increasing capacitance between drain and source Cds. Moreover, the invention further comprises a Cds enhancement doped region interfaced with said body region having higher doping concentration than the epitaxial layer to further enhancing Cds without significantly impact breakdown voltage.
57 Citations
13 Claims
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1. A trench MOSFET (Metal Oxide Semiconductor Field Effect Transistor) comprising:
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a substrate of a first conductivity doping type; an epitaxial layer of said first conductivity doping type over said substrate; a plurality of trenched gates; a plurality of source regions of said first conductivity doping type surrounding top portion of said trenched gates, said source regions have higher doping concentration than said substrate; a plurality of body regions of a second conductivity doping type encompassing said source regions, said body regions have concave-arc shape with respect to top surface of said epitaxial layer; a plurality of trenched source-body contacts; and a plurality of body ohmic contact doped regions of said second conductivity doping type surrounding at least bottoms of said trenched source-body contacts. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification