ELECTROMAGNETIC RADIATION CONVERTER WITH A BATTERY

• US 20110248370A1
• Filed: 05/20/2008
• Published: 10/13/2011
• Est. Priority Date: 05/20/2008
• Status: Abandoned Application

• Current Assignee: Bronya Tsoi
• Original Assignee: Bronya Tsoi
• Inventors: Tsoi, Tatyana Sergeevna, Tsoi, Bronya, Tsoi, Valerian Eduardovich, Budishevsky, Jury Dmitrievich
• Application Number:
  US12/993,359
• Publication Number:
  US 20110248370A1
• Time in Patent Office: Days
• US Class Current: 257/437
• CPC Class Codes: H01L 31/03529 Shape of the potential jump barrier or surface barrier
• CPC Class Codes: H01L 31/068 the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells

Abstract

The invention relates to semiconductor electronics and can be used for producing high-efficient broad-band electromagnetic radiation converters for directly converting incident radiation into electromotive force in both, the optically visible and optically invisible ranges. The inventive electromagnetic radiation converter comprises a semiconductor substrate with N=1 discrete local domains of a first conductivity type formed thereon, and since said substrate is of a second conductivity type, the above-mentioned domains of a first conductivity type form together with the substrate N=1 p-n junctions combined into a current node. Furthermore, isotype junctions generating repulsive isotype barriers to the minority charge carriers are formed on the face side of the substrate beyond the domains of a first conductivity type. The inventive design of the converter enables it to operate in a broader electromagnetic radiation frequency range, thereby promoting the increase in the performance factor and power thereof in comparison with converters known in the prior art, and to achieve the high accuracy and stability on the output characteristics thereof. Batteries formed of the converters of said type are also disclosed.

Claims

1. An electromagnetic radiation converter comprising a semiconductor substrate on the front side of which N≧

1 discrete local first conductivity type domains are formed, said substrate having a second conductivity type so that said first conductivity type domains form together with said substrate N≧

1 p-n junctions combined into a current node, characterized in that isotype junctions are formed outside the first conductivity type domains on the front side of said substrate to create repulsive isotype barriers to the minority charge carriers.

2. The electromagnetic radiation converter according to claim 1, characterized in that at least a part of the substrate front side is textured.

3. The electromagnetic radiation converter according to claim 1, characterized in that an antireflection layer is applied onto the substrate front side.

4. The converter according to claim 1, characterized in that local centers for absorbing the electromagnetic radiation and injecting the non-equilibrium charge carriers are embedded into the substrate to create concentration gradients of the non-equilibrium charge carriers.

5. The converter according to claim 1, characterized in that doped depressed isotype deflecting domains are formed on the substrate front side outside the first conductivity type domains to create a concentration gradient of the non-equilibrium charge carriers relative to the second conductivity type domain or domains.

6. The converter according to claim 1, characterized in that the first conductivity type domains are spaced apart at intervals commensurable to the diffusion length of the non-equilibrium charge carriers.

7. The converter according to claim 1, characterized in that the rear substrate side comprises second conductivity type doped depressed discrete collecting domains forming together with the substrate material local isotype junctions combined into a rear side opposite current node by means of local contacts and a rear side conducting electrode.

8. The converter according to claim 1, characterized in that the substrate c rear side comprises N>

1 first conductivity type discrete local collecting domains and N discrete p-n junctions combined into a second rear side current node by means of a second current collecting electrode.

9. The converter according to claim 1, characterized in that on the substrate front side a dielectric layer is provided with windows at least in the areas of N first conductivity type discrete local domains to ensure contact of the first electrode to said domains.

10. The converter according to claim 1, characterized in that N>

1, said N first conductivity type domains on the substrate front side being separate and single-type and form N separate and single-type p-n junctions.

11. The converter according to claim 1, characterized in that N=1.

12. The converter according to claim 11, characterized in that the first conductivity type domain on the substrate front side comprises K≧

1, where K is an integer number of the first conductivity type areas connected to each other by means of M≧

1 first conductivity type connection elements.

13. The converter according to claim 12, characterized in that M=1, i.e., said first conductivity type domain comprises one first conductivity type doped connection element in the form of one continuous rectangular strip.

14. The converter according to claim 12, characterized in that said first conductivity type domain comprises M>

1 first conductivity type doped connection parts in the form of separate single-type thin rectangular strips.

15. The converter according to claim 12, characterized in that said first conductivity type domain comprises M>

1 first conductivity type doped connection areas arranged to form a grid.

16. The converter according to claim 1, characterized in that the p-n junctions with the collecting domains adjacent thereto are brought out onto the lateral and front surfaces of the front side.

17. The converter according to claim 1, characterized in that a second conductivity type doped layer is disposed under each of N first conductivity type domains on the substrate front side.

18. The converter according to claim 1, characterized in that a stack of G>

1 successively alternating second conductivity type H first conductivity type layers is disposed under each of said first conductivity type domains on the substrate front side.

19. The converter according to claim 18, characterized in that the first and second conductivity type domains in said stack are switched (connected) in series or in parallel.

20. The converter according to claim 19, characterized in that the collecting domains c conductivity of one conductivity type are connected by means of the doped connection elements of the same conductivity type.

21-59. -59. (canceled)