STACKED DUAL INDUCTOR STRUCTURE
First Claim
1. A dual inductor structure implemented within a semiconductor integrated circuit (IC), the dual inductor structure comprising:
- a first inductor comprising a first plurality of coils;
wherein each coil of the first plurality of coils is disposed within a different one of a plurality of conductive layers, wherein the first plurality of coils is vertically stacked and concentric to a vertical axis;
a second inductor comprising a second plurality of coils, wherein each coil of the second plurality of coils is disposed within a different one of the plurality of conductive layers;
wherein the second plurality of coils are vertically stacked and concentric to the vertical axis; and
wherein, within each conductive layer, a coil of the second plurality of coils is disposed within an inner perimeter of a coil of the first plurality of coils.
1 Assignment
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Accused Products
Abstract
The dual inductor structure can include a first inductor including a first plurality of coils. Each coil of the first plurality of coils can be disposed within a different one of a plurality of conductive layers. The coils of the first plurality of coils can be vertically stacked and concentric to a vertical axis. The dual inductor structure further can include a second inductor including a second plurality of coils. Each of the second plurality of coils can be disposed within a different one of the plurality of conductive layers. The coils of the second plurality of coils can be vertically stacked and concentric to the vertical axis. Within each conductive layer, a coil of the second plurality of coils can be disposed within an inner perimeter of a coil of the first plurality of coils.
39 Citations
20 Claims
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1. A dual inductor structure implemented within a semiconductor integrated circuit (IC), the dual inductor structure comprising:
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a first inductor comprising a first plurality of coils; wherein each coil of the first plurality of coils is disposed within a different one of a plurality of conductive layers, wherein the first plurality of coils is vertically stacked and concentric to a vertical axis; a second inductor comprising a second plurality of coils, wherein each coil of the second plurality of coils is disposed within a different one of the plurality of conductive layers; wherein the second plurality of coils are vertically stacked and concentric to the vertical axis; and wherein, within each conductive layer, a coil of the second plurality of coils is disposed within an inner perimeter of a coil of the first plurality of coils. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A dual inductor structure implemented within a semiconductor integrated circuit (IC), the dual inductor structure comprising:
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a first conductive layer comprising a first coil of a first inductor and a first coil of a second inductor; wherein the first coil of the second inductor is disposed within the first coil of the first inductor; a second conductive layer comprising a second coil of the first inductor and a second coil of the second inductor; wherein the second coil of the first inductor has a same line-width as, and is vertically stacked directly beneath, the first coil of the first inductor; and wherein the second coil of the second inductor has a same line-width as, and is vertically stacked directly beneath, the first coil of the second inductor. - View Dependent Claims (12, 13, 14, 15, 16, 17)
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18. A T-coil network circuit implemented within a semiconductor integrated circuit (IC), the T-coil network comprising:
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a first inductor comprising a first terminal coupled to an input pad of the IC and a second terminal coupled to an input device of the IC wherein the first inductor comprises a plurality of vertically stacked coils disposed within a plurality of conductive layers; a second inductor comprising a first terminal and a second terminal; wherein the second terminal of the second inductor is coupled to the second terminal of the first inductor; wherein the second inductor comprises a plurality of vertically stacked coils; wherein each coil of the second inductor comprises at least one turn and has a same number of turns; wherein each conductive layer of the plurality of conductive layers comprises a single coil of the second inductor disposed within a single coil of the first inductor; a termination resistor comprising a first terminal and a second terminal; and wherein the first terminal of the termination resistor is coupled to the first terminal of the second inductor and the second terminal of the termination resistor is coupled to a predetermined voltage potential within the IC. - View Dependent Claims (19, 20)
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Specification