LIGHT EMITTING DIODE AND FABRICATION METHOD THEREOF
First Claim
1. An LED comprising:
- a first conductive type semiconductor layer;
at least one GaN layer having indium directly on the first conductive type semiconductor layer;
at least one GaN layer formed directly on the at least one GaN layer having indium;
an active layer directly on the at least one GaN layer; and
a second conductive type semiconductor layer on the active layer.
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Accused Products
Abstract
A light emitting diode (LED) and a method for fabricating the same, capable of improving brightness by forming a InGaN layer having a low concentration of indium, and whose lattice constant is similar to that of an active layer of the LED, is provided. The LED includes: a buffer layer disposed on a sapphire substrate; a GaN layer disposed on the buffer layer; a doped GaN layer disposed on the GaN layer; a GaN layer having indium disposed on the GaN layer; an active layer disposed on the GaN layer having indium; and a P-type GaN disposed on the active layer. Here, an empirical formula of the GaN layer having indium is given by In(x)Ga(1−x)N and a range of x is given by 0<x<2, and a thickness of the GaN layer having indium is 50-200 Å.
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Citations
21 Claims
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1. An LED comprising:
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a first conductive type semiconductor layer; at least one GaN layer having indium directly on the first conductive type semiconductor layer; at least one GaN layer formed directly on the at least one GaN layer having indium; an active layer directly on the at least one GaN layer; and a second conductive type semiconductor layer on the active layer. - View Dependent Claims (2, 3, 4, 5)
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6. An LED comprising:
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a first conductive type semiconductor layer; at least one GaN layer having indium directly on the first conductive type semiconductor layer; at least one GaN layer formed directly on the at least one GaN layer having indium; an active layer directly on the at least one GaN layer; and a second conductive type semiconductor layer on the active layer, wherein the active layer includes at least one well layer and at least one barrier layer formed in 1 period to 7 periods. - View Dependent Claims (7, 8, 9, 10, 11, 12)
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13. An LED comprising:
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a first conductive type semiconductor layer, wherein the first conductive type semiconductor layer is doped with Si (Silicon); at least one GaN layer having indium directly on the first conductive type semiconductor layer; at least one GaN layer formed directly on the at least one GaN layer having indium; an active layer directly on the at least one GaN layer; and a second conductive type semiconductor layer on the active layer, wherein the second conductive type semiconductor layer is doped with Mg (Magnesium), wherein the second conductive type semiconductor layer has a thickness of 750-1500 Å
. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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21. An LED comprising:
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a first conductive type semiconductor layer, wherein a thickness of the first conductive type semiconductor layer is 1-3 μ
m;at least one GaN layer having indium directly on the first conductive type semiconductor layer; at least one GaN layer formed directly on the at least one GaN layer having indium; an active layer directly on the at least one GaN layer; and a second conductive type semiconductor layer on the active layer.
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Specification