LIGHT EMITTING DIODE AND FABRICATION METHOD THEREOF

• US 20110253978A1
• Filed: 06/27/2011
• Published: 10/20/2011
• Est. Priority Date: 07/18/2003
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: Seong Jae Kim
• Inventors: KIM, Seong Jae
• Granted Patent: US 8,674,337 B2
• Time in Patent Office: Days
• US Class Current: 257/13
• CPC Class Codes: H01L 33/0025 comprising only AIIIBV compounds
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

A light emitting diode (LED) and a method for fabricating the same, capable of improving brightness by forming a InGaN layer having a low concentration of indium, and whose lattice constant is similar to that of an active layer of the LED, is provided. The LED includes: a buffer layer disposed on a sapphire substrate; a GaN layer disposed on the buffer layer; a doped GaN layer disposed on the GaN layer; a GaN layer having indium disposed on the GaN layer; an active layer disposed on the GaN layer having indium; and a P-type GaN disposed on the active layer. Here, an empirical formula of the GaN layer having indium is given by In(x)Ga(1−x)N and a range of x is given by 0<x<2, and a thickness of the GaN layer having indium is 50-200 Å.

Claims

1. An LED comprising:

a first conductive type semiconductor layer;

at least one GaN layer having indium directly on the first conductive type semiconductor layer;

at least one GaN layer formed directly on the at least one GaN layer having indium;

an active layer directly on the at least one GaN layer; and

a second conductive type semiconductor layer on the active layer.

2. The LED according to claim 1, wherein an empirical formula of the at least one GaN layer having indium is given by In_xGa₁₋

xN and a range of x is given by 0<

x<

0.2.

3. The LED according to claim 1, wherein the active layer is formed of a multi-quantum well structure including InGaN.

4. The LED according to claim 1, wherein the second conductive type semiconductor layer has a thickness of 750-1500 Å

.

5. The LED according to claim 1, wherein the active layer includes at least one well layer and at least one barrier layer formed in 1 period to 7 periods.

6. An LED comprising:

a first conductive type semiconductor layer;

at least one GaN layer having indium directly on the first conductive type semiconductor layer;

at least one GaN layer formed directly on the at least one GaN layer having indium;

an active layer directly on the at least one GaN layer; and

a second conductive type semiconductor layer on the active layer,

wherein the active layer includes at least one well layer and at least one barrier layer formed in 1 period to 7 periods.

7. The LED according to claim 6, wherein the at least one GaN layer having indium has a thickness greater than 50 Å

and less than 200 Å

.

8. The LED according to claim 6, wherein an empirical formula of the at least one GaN layer having indium is given by In_xGa₁₋

xN and a range of x is given by 0<

x<

0.2.

9. The LED according to claim 6, wherein the active layer is formed of a multi-quantum well structure including InGaN.

10. The LED according to claim 6, wherein a thickness of the first conductive type semiconductor layer is 1-3 μ

m.

11. The LED according to claim 6, the LED further comprising a transparent layer around the second conductive type semiconductor layer.

12. The LED according to claim 6, wherein the second conductive type semiconductor layer includes at least one well layer and at least one barrier layer.

13. An LED comprising:

a first conductive type semiconductor layer, wherein the first conductive type semiconductor layer is doped with Si (Silicon);

at least one GaN layer having indium directly on the first conductive type semiconductor layer;

at least one GaN layer formed directly on the at least one GaN layer having indium;

an active layer directly on the at least one GaN layer; and

a second conductive type semiconductor layer on the active layer, wherein the second conductive type semiconductor layer is doped with Mg (Magnesium), wherein the second conductive type semiconductor layer has a thickness of 750-1500 Å

.

14. The LED according to claim 13, wherein the active layer is formed of a multi-quantum well structure including InGaN.

15. The LED according to claim 13, wherein the multi-quantum well structure includes an InGaN/GaN structure.

16. The LED according to claim 13, wherein an empirical formula of the at least one GaN layer having indium is given by In_xGa₁₋

xN and a range of x is given by 0<

x<

0.2.

17. The LED according to claim 13, wherein the active layer includes at least one well layer and at least one barrier layer formed in 1 period to 7 periods.

18. The LED according to claim 13, wherein the at least one GaN layer having indium has a thickness greater than 50 Å

and less than 200 Å

.

19. The LED according to claim 13, wherein the LED further comprising a transparent layer around the second conductive type semiconductor layer.

20. The LED according to claim 13, wherein the transparent metal is ITO (Indium-Tin-Oxide).

21. An LED comprising:

a first conductive type semiconductor layer, wherein a thickness of the first conductive type semiconductor layer is 1-3 μ

m;

at least one GaN layer having indium directly on the first conductive type semiconductor layer;

at least one GaN layer formed directly on the at least one GaN layer having indium;

an active layer directly on the at least one GaN layer; and

a second conductive type semiconductor layer on the active layer.