METHOD OF MANUFACTURING A VERTICAL TFET
First Claim
1. A method for manufacturing a complementary nanowire tunnel field effect transistor semiconductor device, comprising:
- providing a stack comprising a layer of sacrificial material atop a layer of channel material;
removing material from the layer of channel material and the layer of sacrificial material so as to form at least one first nanowire and at least one second nanowire;
forming a nanowire tunnel field effect transistor of a first dopant type by replacing the sacrificial material in the at least one first nanowire with heterojunction material of a first doping material of a first dopant type; and
thereafterforming a nanowire tunnel field effect transistor of a second dopant type by replacing the sacrificial material in the at least one second nanowire with heterojunction material of a second doping material of a second dopant type, whereby a complementary nanowire tunnel field effect transistor device comprising at least one nanowire tunnel field effect transistor of the first dopant type and at least one nanowire tunnel field effect transistor of the second dopant type is obtained.
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Abstract
The present disclosure provides a method for manufacturing at least one nanowire Tunnel Field Effect Transistor (TFET) semiconductor device. The method comprises providing a stack comprising a layer of channel material with on top thereof a layer of sacrificial material, removing material from the stack so as to form at least one nanowire from the layer of channel material and the layer of sacrificial material, and replacing the sacrificial material in the at least one nanowire by heterojunction material. A method according to embodiments of the present disclosure is advantageous as it enables easy manufacturing of complementary TFETs.
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Citations
11 Claims
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1. A method for manufacturing a complementary nanowire tunnel field effect transistor semiconductor device, comprising:
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providing a stack comprising a layer of sacrificial material atop a layer of channel material; removing material from the layer of channel material and the layer of sacrificial material so as to form at least one first nanowire and at least one second nanowire; forming a nanowire tunnel field effect transistor of a first dopant type by replacing the sacrificial material in the at least one first nanowire with heterojunction material of a first doping material of a first dopant type; and
thereafterforming a nanowire tunnel field effect transistor of a second dopant type by replacing the sacrificial material in the at least one second nanowire with heterojunction material of a second doping material of a second dopant type, whereby a complementary nanowire tunnel field effect transistor device comprising at least one nanowire tunnel field effect transistor of the first dopant type and at least one nanowire tunnel field effect transistor of the second dopant type is obtained. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification