LIGHT EMITTING DIODE

• US 20110254021A1
• Filed: 10/26/2010
• Published: 10/20/2011
• Est. Priority Date: 04/16/2010
• Status: Active Grant

• Current Assignee: Hon Hai Precision Industry Co., Ltd., Tsinghua University
• Original Assignee: Hon Hai Precision Industry Co., Ltd., Tsinghua University
• Inventors: YANG, FENG-LEI, JI, PENG, ZHU, JUN, JIN, GUO-FAN
• Granted Patent: US 8,633,042 B2
• Time in Patent Office: Days
• US Class Current: 257/79
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/40 Materials therefor

Abstract

A light emitting diode includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode, a transparent conductive layer, a second electrode and a metal grating. The first semiconductor layer, the active layer, and the second semiconductor layer are orderly stacked on the substrate. The first electrode is electrically connected to the first semiconductor layer. The transparent conductive layer is located on a surface of the second semiconductor layer away from the substrate. The second electrode is electrically connected to the transparent conductive layer. The metal grating is located on a surface of the transparent conductive layer away from the substrate. The metal grating is a two-dimensional array of a plurality of metal micro-structures.

Claims

1. A light emitting diode comprising:

a substrate;

a first semiconductor layer, an active layer, a second semiconductor layer, wherein the first semiconductor layer, the active layer, and the second semiconductor layer are orderly stacked on the substrate;

a first electrode electrically connected to the first semiconductor layer;

a transparent conductive layer located on a surface of the second semiconductor layer away from the substrate;

a second electrode electrically connected to the transparent conductive layer;

a metal grating located on a surface of the transparent conductive layer away from the substrate, wherein the metal grating is a two-dimensional array of a plurality of metal micro-structures.

2. The light emitting diode of claim 1, wherein the transparent conductive layer comprises a gold layer.

3. The light emitting diode of claim 2, wherein the gold layer has a thickness of about 1 nanometer to about 10 nanometers.

4. The light emitting diode of claim 1, wherein the transparent conductive layer comprises a gold layer and a nickel layer interposed between the gold layer and the second semiconductor layer.

5. The light emitting diode of claim 4, wherein the transparent conductive layer has a thickness of about 1 nanometer to about 10 nanometers.

6. The light emitting diode of claim 1, wherein the transparent conductive layer comprises an indium tin oxide layer.

7. The light emitting diode of claim 6, wherein the transparent conductive layer has a thickness of about 10 nanometers to about 200 nanometers.

8. The light emitting diode of claim 1, wherein a shape of each of the plurality of metal micro-structures is selected from the group consisting of tapered, cuniform, columned, and prism-shaped.

9. The light emitting diode of claim 1, wherein the plurality of metal micro-structures is a plurality of metal cuboids.

10. The light emitting diode of claim 9, wherein a height of each metal cuboid ranges from about 20 nanometers to about 1020 nanometers, and a length and a width of the metal cuboid both range from about 60 nanometers to about 120 nanometers.

11. The light emitting diode of claim 9, wherein a distance between two centerlines of two adjacent metal cuboids of the plurality of metal cuboids ranges from about 200 nanometers to about 1000 nanometers.

12. The light emitting diode of claim 9, wherein the plurality of metal cuboids is arranged to form a plurality of columns and a plurality of rows, and a duty factor along any row or any column ranges from about 0.06:

1 to about 0.6;

1.

13. The light emitting diode of claim 12, wherein a height of each metal cuboid is about 55 nanometers, a length of the metal cuboid is about 85 nanometers, a width of the metal cuboid is about 85 nanometers, a distance between two centerlines of two adjacent metal cuboids of the plurality of the metal cuboids is about 260 nanometers, and a duty factor along any column and any row of the metal cuboids is about 0.3269:

1.

14. The light emitting diode of claim 12, wherein a height of each metal cuboid is about 50 nanometers, a length of each metal cuboid is about 85 nanometers, a width of each metal cuboid is about 85 nanometers, a distance between two centerlines of two adjacent metal cuboids is about 680 nanometers, and a duty factor along any column and any row of the metal cuboids is about 0.125:

1.

15. The light emitting diode of claim 12, wherein a height of each metal cuboid is about 45 nanometers, a length of each metal cuboid is about 85 nanometers, a width of the metal cuboid is about 85 nanometers, a distance between two centerlines of two adjacent metal cuboids is about 270 nanometers, and a duty factor along any column and any row of the metal cuboids is about 0.3148:

1.

16. The light emitting diode of claim 1, wherein the metal grating is made of gold.

17. The light emitting diode of claim 1, wherein the metal grating is made of silver.

18. The light emitting diode of claim 17, wherein a silicon dioxide film is formed on an exposed surfaces of the metal grating.

19. The light emitting diode of claim 18, wherein the silicon dioxide film has a thickness from about 2 nanometers to about 20 nanometers.