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STRUCTURES AND METHODS OF FABRICATING DUAL GATE DEVICES

  • US 20110254084A1
  • Filed: 03/02/2011
  • Published: 10/20/2011
  • Est. Priority Date: 03/02/2010
  • Status: Active Grant
First Claim
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1. A method of fabricating a dual gate semiconductor device, said method comprising:

  • depositing first polysilicon into a first trench and into a second trench that are formed in a substrate;

    performing a first polysilicon polishing process to planarize exposed surfaces of said first polysilicon so that said surfaces are flush with adjacent surfaces;

    after said first polysilicon polishing process, forming a third trench in said substrate between said first and second trenches, wherein said third trench is shallower than said first and second trenches;

    depositing second polysilicon into said third trench;

    performing a second polysilicon polishing process to planarize an exposed surface of said second polysilicon so that said surface is flush with adjacent surfaces; and

    forming a first metal contact to said first polysilicon and a second metal contact to said second polysilicon.

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