FIELD EFFECT TRANSISTOR USING OXIDE FILM FOR CHANNEL AND METHOD OF MANUFACTURING THE SAME

• US 20110256684A1
• Filed: 06/27/2011
• Published: 10/20/2011
• Est. Priority Date: 03/17/2006
• Status: Abandoned Application

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Kumomi, Hideya, Iwasaki, Tatsuya
• Application Number:
  US13/169,221
• Publication Number:
  US 20110256684A1
• Time in Patent Office: Days
• US Class Current: 438/301
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78618 characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure silicide contacts, electrodes in general H01L29/458
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

The present invention provides a field effect transistor including an oxide film as a semiconductor layer, wherein the oxide film includes one of a source part and a drain part to which one of hydrogen and deuterium is added.

Claims

1-7. -7. (canceled)

8. A method of manufacturing a field effect transistor including an oxide film as a semiconductor layer, comprising the steps of:

forming the oxide film on a substrate; and

adding one of hydrogen and deuterium to a portion of the oxide film to form a source part and a drain part.

9. A method of manufacturing a field effect transistor including an oxide film as a semiconductor layer, comprising the steps of:

forming the oxide film on a substrate;

forming a gate insulating film on the oxide film;

forming a gate electrode on the gate insulating film; and

adding one of hydrogen and deuterium to the oxide film with using a pattern of the gate electrode as a mask to form a source part and a drain part in the oxide film in self-alignment with the pattern of the gate electrode.

10. (canceled)