SEMICONDUCTOR COMPONENT AND METHODS FOR PRODUCING A SEMICONDUCTOR COMPONENT

• US 20110256688A1
• Filed: 06/09/2011
• Published: 10/20/2011
• Est. Priority Date: 06/28/2006
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Gross, Thomas, Gruber, Hermann, Meiser, Andreas, Hartner, Walter, Bonart, Dietrich
• Granted Patent: US 8,637,378 B2
• Time in Patent Office: Days
• US Class Current: 438/430
• CPC Class Codes: H01L 21/76286 Lateral isolation by refilling of trenches with polycristalline material
• CPC Class Codes: H01L 21/76802 by forming openings in dielectrics
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material
• CPC Class Codes: H01L 21/84 the substrate being other than a semiconductor body, e.g. being an insulating body
• CPC Class Codes: H01L 27/1203 the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688

Abstract

A semiconductor component includes a semiconductor body, in which are formed: a substrate of a first conduction type, a buried semiconductor layer of a second conduction type arranged on the substrate, and a functional unit semiconductor layer of a third conduction type arranged on the buried semiconductor layer, in which at least two semiconductor functional units arranged laterally alongside one another are provided. The buried semiconductor layer is part of at least one semiconductor functional unit, the semiconductor functional units being electrically insulated from one another by an isolation structure which permeates the functional unit semiconductor layer, the buried semiconductor layer, and the substrate. The isolation structure includes at least one trench and an electrically conductive contact to the substrate, the contact to the substrate being electrically insulated from the functional unit semiconductor layer and the buried layer by the at least one trench.

Claims

1. A method for producing a semiconductor component with a semiconductor body, comprising:

providing a substrate of a first conduction type;

providing a buried semiconductor layer of a second conduction type on the substrate;

providing a functional unit semiconductor layer of a third conduction type on the buried semiconductor layer;

forming at least one trench in the semiconductor body which reaches right into the substrate;

forming an insulating layer, which electrically insulates the trench interior from the functional unit semiconductor layer and the buried semiconductor layer but has a cutout at least in the region of the trench bottom; and

filling the at least one trench with an electrically conductive material.

2. The method of claim 1, further comprising filling the trench with a semiconductor material of the first conduction type.

3. The method of claim 2, further comprising, prior to filling the at least one trench with semiconductor material, introducing dopants of the first conduction type into the at least one trench, so that the doping concentration of that region of the substrate which adjoins the trench bottom of the at least one trench is increased with respect to the doping concentration of the substrate.

4. The method as claimed in claim 1, further comprising prior to filling the trench with the electrically conductive material, forming a silicide at least on the bottom of the trench, and filling the trench with a semiconductor material of an arbitrary conduction type.

5. The method as claimed in claim 4, further comprising forming the silicide is formed by the deposition of a metal at least on the bottom of the trench.

6. The method of claim 5, wherein the metal is selected from a group comprising Ti, W, Co, Ta, Hf and other transition metals.

7. The method of claim 1, wherein the electrically conductive material is a metal.

8. The method of claim 7, wherein the metal is selected from a group comprising Ti, W, Co, Al, Cu, transition metals and their semiconductor compounds, silicides, graphite, and electrically conductive nitrides and carbides.

9. A method for producing a semiconductor component with a semiconductor body, comprising:

forming a substrate of a first conduction type;

forming a buried semiconductor layer on the substrate, the buried semiconductor layer comprising at least one region whose conduction type is the first conduction type and at least one other region whose conduction type is a second conduction type;

forming a functional unit semiconductor layer of a third conduction type on the buried semiconductor layer;

forming at least one trench structure in the semiconductor body, each trench structure, proceeding from the top side of the functional unit semiconductor layer, reaching right into the substrate, and each trench structure comprising two trenches which are laterally spaced apart from one another and between which is situated one of the regions of the first conduction type of the buried semiconductor layer; and

enlarging the vertical and/or horizontal extent of the regions of the first doping type of the buried semiconductor layer by performing a heat treatment process.

10. The method of claim 9 further comprising, as a result of the formation of the trenches, decreasing the lateral extents of the regions of the first doping type of the buried semiconductor layer by virtue of the lateral positions of the regions of the first doping type of the buried semiconductor layer and the lateral positions of the trenches overlapping one another.

11. The method of claim 9 further comprising converting the region above the region of the first doping type of the buried semiconductor layer into a region of the first conduction type by introducing dopants.

12. The method of claim 9 further comprising filling the trenches with insulating material.