PHOTOSENSITIVE IMAGING DEVICES AND ASSOCIATED METHODS
First Claim
Patent Images
1. A monolithic sensor for detecting infrared and visible light, comprising:
- a semiconductor substrate;
a semiconductor layer coupled to the semiconductor substrate, the semiconductor layer having a device surface opposite the semiconductor substrate;
a visible light photodiode formed at the device surface;
an infrared photodiode formed at the device surface in proximity to the visible light photodiode; and
a light diffusing region coupled to the infrared photodiode and positioned to interact with electromagnetic radiation.
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Abstract
A monolithic sensor for detecting infrared and visible light according to an example includes a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate. The semiconductor layer includes a device surface opposite the semiconductor substrate. A visible light photodiode is formed at the device surface. An infrared photodiode is also formed at the device surface and in proximity to the visible light photodiode. A textured region is coupled to the infrared photodiode and positioned to interact with electromagnetic radiation.
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Citations
25 Claims
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1. A monolithic sensor for detecting infrared and visible light, comprising:
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a semiconductor substrate; a semiconductor layer coupled to the semiconductor substrate, the semiconductor layer having a device surface opposite the semiconductor substrate; a visible light photodiode formed at the device surface; an infrared photodiode formed at the device surface in proximity to the visible light photodiode; and a light diffusing region coupled to the infrared photodiode and positioned to interact with electromagnetic radiation. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A system for detecting and combining infrared and visible light, comprising:
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a sensor, comprising; a semiconductor substrate; a semiconductor layer coupled to the semiconductor substrate, the semiconductor layer having a device surface opposite the semiconductor substrate; a visible light photodiode formed at the device surface; an infrared photodiode formed at the device surface in proximity to the visible light photodiode; a textured region coupled to the infrared photodiode and positioned to interact with electromagnetic radiation; and an infrared light source operable to emit infrared light detectable by the infrared photodiode. - View Dependent Claims (12, 13)
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14. A method for creating a composite image of detected infrared and visible light with a monolithic sensor, comprising:
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detecting the visible light with the monolithic sensor as a visible light signal; transmitting the visible light signal to an image processing device; detecting the infrared light with the monolithic sensor as an infrared light signal; integrating multiple detections of the infrared light to create a combined infrared light signal; transmitting the combined infrared light signal to the image processing device; and integrating the combined infrared light signal and the visible light signal using the image processing device to create a composite image. - View Dependent Claims (15, 16, 17, 18)
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19. A photodiode pixel device, comprising:
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a plurality of rows of photodiodes for detecting impinging electromagnetic radiation and accumulating an electrical charge; a global transfer gate transistor coupled to the photodiodes for gating the photodiodes, wherein an open state of the global transfer gate transistor causes the electrical charge from the photodiodes to accumulate at an accumulation node; a transfer gate transistor coupled to the accumulation node for gating the accumulation node, wherein an open state of the transfer gate transistor causes the electrical charge from the accumulation node to accumulate as a signal at a floating diffusion node; a source follower transistor coupled to the floating diffusion node and configured to receive the signal from the floating diffusion node, wherein the source follower transistor amplifies the signal; a row select gate transistor coupled to the source follower transistor, wherein the row select gate transistor reads out the signal from successive of the plurality of rows of photodiodes; a reset gate transistor coupled between a voltage source and the floating diffusion node, wherein an open state of the reset gate transistor resets the electrical charge at the floating diffusion node; and a global reset transistor coupled between the photodiodes and the voltage source, wherein an open state of the global reset transistor prevents accumulation of the electrical charge at the photodiodes. - View Dependent Claims (20, 21, 22)
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23. A monolithic sensor for detecting infrared and visible light, comprising:
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a semiconductor substrate; a first pixel formed over the semiconductor substrate; and a second pixel formed over the semiconductor substrate in proximity to the first pixel; wherein the first pixel and the second pixel comprise separate control logic and routing in the sensor. - View Dependent Claims (24, 25)
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Specification