SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME

• US 20110260184A1
• Filed: 09/14/2010
• Published: 10/27/2011
• Est. Priority Date: 04/26/2010
• Status: Abandoned Application

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Furuyama, Hideto
• Application Number:
  US12/881,618
• Publication Number:
  US 20110260184A1
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/502 Wavelength conversion materials
• CPC Class Codes: H01L 33/507 the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
• CPC Class Codes: H01L 33/54 having a particular shape
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, an insulating film, a p-side draw out electrode, an n-side draw out electrode, a resin, a fluorescent layer, and a fluorescent reflecting film. The semiconductor layer includes a first face, a second face opposite to the first face, and a light emitting layer. The fluorescent layer is provided on the first face side of the semiconductor layer. The fluorescent reflecting film is provided between the first face and the fluorescent layer.

Claims

1. A semiconductor light emitting device, comprising:

a semiconductor layer including a first face, a second face opposite to the first face, and a light emitting layer;

a p-side electrode and an n-side electrode provided on the second face of the semiconductor layer;

an insulating film provided on the second face side of the semiconductor layer, the insulating film having a first opening reaching the p-side electrode and a second opening reaching the n-side electrode;

a p-side draw out electrode including a p-side metal interconnect layer and a p-side metal pillar, the p-side metal interconnect layer being provided in the first opening and on the insulating film, the p-side metal pillar being provided on the p-side metal interconnect layer;

an n-side draw out electrode including an n-side metal interconnect layer and an n-side metal pillar, the n-side metal interconnect layer being provided in the second opening and on the insulating film, the n-side metal pillar being provided on the n-side metal interconnect layer, a contact surface area between the n-side metal interconnect layer and the n-side metal pillar being greater than a contact surface area between the n-side metal interconnect layer and the n-side electrode;

a resin filled to surround the p-side metal pillar and the n-side metal pillar;

a fluorescent layer provided on the first face side of the semiconductor layer; and

a fluorescent reflecting film provided between the first face and the fluorescent layer.

2. The device of claim 1, wherein a reflectance of the fluorescent reflecting film with respect to a fluorescent wavelength of the fluorescent layer is higher than a reflectance of the fluorescent reflecting film with respect to a light emission wavelength of the light emitting layer.

3. The device of claim 1, wherein a structure of the fluorescent reflecting film includes a first dielectric film repeatedly stacked alternately with a second dielectric film, the first dielectric film and the second dielectric film having mutually different refractive indexes.

4. The device of claim 1, wherein the second face of the semiconductor layer has a difference in levels, the n-side electrode being provided on a lower level portion, the p-side electrode being provided on an upper level portion.

5. The device of claim 4, wherein a surface area of the upper level portion is greater than a surface area of the lower level portion.

6. The device of claim 1, wherein a planar size of the p-side electrode is greater than a planar size of the n-side electrode.

7. The device of claim 1, wherein each of a thickness of the p-side metal pillar and a thickness of the n-side metal pillar is thicker than a thickness of a stacked body including the semiconductor layer, the p-side electrode, the n-side electrode, the insulating film, the p-side metal interconnect layer, and the n-side metal interconnect layer.

8. The device of claim 1, wherein a contact surface area between the p-side metal interconnect layer and the p-side metal pillar is greater than a contact surface area between the p-side metal interconnect layer and the p-side electrode.

9. The device of claim 1, wherein the fluorescent reflecting film is provided in contact with the first face of the semiconductor layer.

10. The device of claim 1, wherein a portion of the n-side metal interconnect layer extends to a position below the light emitting layer.

17. The device of claim 1, wherein a size of the fluorescent layer is substantially same as a size of the fluorescent reflecting film.

18. The device of claim 1, wherein an outer side of the resin is aligned with outer sides of the fluorescent layer and the fluorescent reflecting film.

19. The device of claim 1, further comprising an insulating layer provided above the resin and beneath the fluorescent reflecting film, and surrounding the light emitting layer,

wherein an outer side of the insulating layer is aligned with an outer side of the resin.

20. The device of claim 18, further comprising an insulating layer provided above the resin and beneath the fluorescent reflecting film, and surrounding the light emitting layer,

wherein an outer side of the insulating layer is aligned with the outer side of the resin.

11. A method for manufacturing a semiconductor light emitting device, comprising:

forming a seed metal to cover an insulating film which includes a first opening and a second opening, the insulating film being provided on a second face side of a semiconductor layer which is provided on a substrate and includes a first face on the substrate side, the second face opposite to the first face and a light emitting layer, the first opening which reaches a p-side electrode provided on the second face, the second opening which reaches a n-side electrode provided on the second face;

forming a p-side metal interconnect layer and an n-side metal interconnect layer on the seed metal;

forming a p-side metal pillar on the p-side metal interconnect layer and forming an n-side metal pillar on the n-side metal interconnect layer;

separating the seed metal into a p-side seed metal and an n-side seed metal by removing the seed metal exposed between the p-side metal interconnect layer and the n-side metal interconnect layer;

forming a resin between the p-side seed metal and the n-side seed metal, around the p-side metal pillar, and around the n-side metal pillar;

forming a fluorescent reflecting film on the first face side of the semiconductor layer; and

forming a fluorescent layer on a face of the fluorescent reflecting film on a side opposite to a face of the fluorescent reflecting film facing the first face.

12. The method of claim 11, wherein the forming of the fluorescent reflecting film is performed by Chemical Vapor Deposition (CVD) and a temperature of the CVD does not melt the resin.

13. The method of claim 11, wherein the forming of the fluorescent reflecting film is performed by sputtering and a temperature of the sputtering does not melt the resin.

14. The method of claim 11, wherein the forming of the fluorescent reflecting film includes repeatedly stacking a first dielectric film alternately with a second dielectric film, the first dielectric film and the second dielectric film having mutually different refractive indexes.

15. The method of claim 11, further comprising removing the substrate after the forming of the resin,

the forming of the fluorescent reflecting film on the first face of the semiconductor layer being performed after the removing of the substrate.

16. The method of claim 11, further comprising making a trench in the semiconductor layer to separate the semiconductor layer into a plurality.