SEMICONDUCTOR LIGHT-EMITTING DEVICE

• US 20110260194A1
• Filed: 11/10/2009
• Published: 10/27/2011
• Est. Priority Date: 11/13/2008
• Status: Active Grant

• Current Assignee: Nagoya University
• Original Assignee: Nagoya University
• Inventors: Takeda, Yoshikazu, Mizutani, Ryota, Fuchi, Shingo, Sakano, Ayako
• Granted Patent: US 8,405,111 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/13 of an individual bump connector
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/501 characterised by the materials, e.g. binder
• CPC Class Codes: H01L 33/56 Materials, e.g. epoxy or silicone resin

Abstract

[Problem] A semiconductor light-emitting device, which does not suffer from color unevenness of the light taken out of a sealing material even when a phosphor is used therein and enables reduction of the production cost is provided.

[Means for Solving] Because semiconductor light-emitting device (1) comprises a semiconductor light-emitting element (4) and a phosphor (5) sealing the semiconductor light-emitting element (4) and having a matrix composed of a glass and a luminescence center contained in the matrix, by directly sealing the semiconductor light-emitting element (4) with the phosphor (5), color unevenness of light emitted from the device is reduced and any sealing material other than the phosphor (5) becomes unnecessary. Since a process of mixing the phosphor (5) and any other sealing material is not required, the production cost can be reduced.

Claims

1. A semiconductor light-emitting device comprising:

a semiconductor light-emitting element; and

a sealing material sealing the semiconductor light-emitting element directly consists only of a phosphor which has a matrix composed of a glass and a luminescence center contained in the matrix,

wherein the matrix composed of the glass has different refractive index between a near side and a far side of the semiconductor light-emitting element,

the matrix composed of the glass has higher refractive index at the far side than at the near side of the semiconductor light-emitting element, and

the refractive index of the matrix composed of the glass is adjusted to the refractive index of the semiconductor light-emitting element in the semiconductor light-emitting element and the phosphor sealing the semiconductor light-emitting element.

2. The semiconductor light-emitting device according to claim 1, wherein the semiconductor light-emitting element emits white light.

3. The semiconductor light-emitting device according to claim 1, wherein the luminescence center of the phosphor is at least one of Yb ion and Nd ion.

4. The semiconductor light-emitting device according to claim 3, wherein the luminescence center of the phosphor contains Yb ion and Nd ion, and the phosphor emits at around 850-1100 nm when excited by the semiconductor light-emitting element.

5. The semiconductor light-emitting device according to claim 4, wherein a spectrum of the phosphor has plural peaks at from 450 nm to 800 nm.

6. The semiconductor light-emitting device according to claim 5, wherein the semiconductor light-emitting element emits light of wavelength range from 450 nm to 800 nm.

7. The semiconductor light-emitting device according to claim 6, wherein the phosphor has the most excellent excitation efficiency at around 585 nm, and the semiconductor light-emitting element emits light which has a peak wavelength at 585 nm.

8. The semiconductor light-emitting device according to claim 1, wherein the phosphor emits infrared light when excited by light from the semiconductor light-emitting element.

9. The semiconductor light-emitting device according to claim 1, wherein the matrix of the phosphor is Bi₂O₃—

B₂O₃ based glass.

10. The semiconductor light-emitting device according to claim 1, wherein the matrix of the phosphor contains Sb₂O₃.