HIGH POWER FET SWITCH
First Claim
1. A stacked field effect transistor (FET) switch for a time-variant input signal, the FET switch comprising:
- a FET device stack operable in an open state and in a closed state, the FET device stack comprising a plurality of FET devices coupled in series to form the FET device stack;
the plurality of FET devices including at least a first FET device, one or more middle FET devices, and a last FET device, each of the plurality of FET devices having a gate contact, a drain contact, and a source contact, wherein the drain contact of the first FET device is at a first end of the FET device stack, and the source contact of the last FET device is at a second end of the FET device stack, and wherein the one or more middle FET devices are coupled in the FET device stack between the first FET device and the last FET device;
a first decoupling path configured to pass the time-variant input signal during the open state of the FET device stack, the first decoupling path being connected to the FET device stack such that the time-variant input signal bypasses the FET device stack from the drain contact of the first FET device to either the gate contact of the first FET device or the source contact of the first FET device during the open state; and
a second decoupling path configured to pass the time-variant input signal during the open state of the FET device stack, the second decoupling path being connected to the FET device stack such that the time-variant input signal bypasses the FET device stack from either the drain contact of the last FET device or the gate contact of the last FET device to the source contact of the last FET device during the open state.
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Accused Products
Abstract
Described are embodiments of stacked field effect transistor (FET) switch having a plurality of FET devices coupled in series to form an FET device stack. To prevent the FET device stack from being turned on during large signal conditions, a first decoupling path and a second decoupling path are provided for the first FET device and the last FET device in the FET device stack. Both decoupling paths are configured to pass a time-variant input signal during the open state. The first decoupling path may be coupled from the drain contact of the first FET device to the gate contact or the source contact. The second decoupling path may be coupled from the source contact of the last FET device to the gate contact or drain contact. The time-variant input signal bypasses the FET device stack through the first and second decoupling paths during the open state.
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Citations
24 Claims
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1. A stacked field effect transistor (FET) switch for a time-variant input signal, the FET switch comprising:
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a FET device stack operable in an open state and in a closed state, the FET device stack comprising a plurality of FET devices coupled in series to form the FET device stack; the plurality of FET devices including at least a first FET device, one or more middle FET devices, and a last FET device, each of the plurality of FET devices having a gate contact, a drain contact, and a source contact, wherein the drain contact of the first FET device is at a first end of the FET device stack, and the source contact of the last FET device is at a second end of the FET device stack, and wherein the one or more middle FET devices are coupled in the FET device stack between the first FET device and the last FET device; a first decoupling path configured to pass the time-variant input signal during the open state of the FET device stack, the first decoupling path being connected to the FET device stack such that the time-variant input signal bypasses the FET device stack from the drain contact of the first FET device to either the gate contact of the first FET device or the source contact of the first FET device during the open state; and a second decoupling path configured to pass the time-variant input signal during the open state of the FET device stack, the second decoupling path being connected to the FET device stack such that the time-variant input signal bypasses the FET device stack from either the drain contact of the last FET device or the gate contact of the last FET device to the source contact of the last FET device during the open state. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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24. A stacked field effect transistor (FET) switch for a time-variant input signal, the FET switch comprising:
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a FET device stack operable in an open state and in a closed state, the FET device stack comprising a plurality of FET devices coupled in series to form the FET device stack, the FET device stack having a first end and a second end; the plurality of FET devices each having a gate contact, a drain contact, and a source contact; a first decoupling path configured to pass the time-variant input signal during the open state of the FET device stack, the first decoupling path being connected between the first end of the FET device stack and either the gate contact or the source contact of one of the plurality of FET devices; and a second decoupling path configured to pass the time-variant input signal during the open state of the FET device stack, the second decoupling path being connected between the second end of the FET device stack and either the gate contact or the drain contact of another one of the plurality of FET devices.
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Specification