GAS MONITORING DEVICE, COMBUSTION STATE MONITORING DEVICE, SECULAR CHANGE MONITORING DEVICE, AND IMPURITY CONCENTRATION MONITORING DEVICE

• US 20110261359A1
• Filed: 07/30/2009
• Published: 10/27/2011
• Est. Priority Date: 12/25/2008
• Status: Active Grant

• Current Assignee: Sumitomo Electric Industries Limited (Sumitomo Corporation)
• Original Assignee: Sumitomo Electric Industries Limited (Sumitomo Corporation)
• Inventors: Nagai, Youichi, Inada, Hiroshi
• Granted Patent: US 8,624,189 B2
• Time in Patent Office: Days
• US Class Current: 356/437
• CPC Class Codes: G01J 2005/0077 Imaging
• CPC Class Codes: G01J 5/0044 Furnaces, ovens, kilns G01J5/0007, G01J5/004 take precedence
• CPC Class Codes: G01J 5/602 using selective, monochromatic or bandpass filtering
• CPC Class Codes: G01N 2021/3531 without instrumental source, i.e. radiometric
• CPC Class Codes: G01N 21/3504 for analysing gases, e.g. multi-gas analysis
• CPC Class Codes: G01N 21/359 using near infrared light
• CPC Class Codes: G01N 2201/0833 Fibre array at detector, resolving
• CPC Class Codes: G01N 2201/0846 Fibre interface with sample, e.g. for spatial resolution
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 31/035209 comprising a quantum structures
• CPC Class Codes: H01L 31/1035 the devices comprising active layers formed only by AIIIBV compounds

Abstract

[Object] To provide a gas monitoring device etc. with which gas monitoring can be preformed at high sensitivity by using an InP-based photodiode in which a dark current is reduced without a cooling mechanism and the sensitivity is extended to a wavelength of 1.8 μm or more.

[Solution] An absorption layer 3 has a multiquantum well structure composed of group III-V semiconductors, a pn-junction 15 is formed by selectively diffusion of an impurity element in the absorption layer, and the concentration of the impurity element in the absorption layer is 5×10¹⁶/cm³ or less. The gas monitoring device detects a gas component and the like contained in a gas by receiving light having at least one wavelength of 3 μm or less.

Claims

1. A gas monitoring device for monitoring a gas using light in the near-infrared region with a wavelength range of 3 μ

m or less, the gas monitoring device comprising;

a light-receiving element that receives light in the near-infrared region,

wherein the light-receiving element includes an absorption layer formed on an InP substrate and having a multiquantum well structure,

the absorption layer has a bandgap wavelength of 1.8 μ

m or more and 3 μ

m or less; and

a diffusion concentration distribution control layer is disposed on a surface side of the absorption layer, the surface side being opposite the InP substrate,

the diffusion concentration distribution control layer has a bandgap smaller than that of InP,

in the light-receiving element, a pn-junction is formed by selectively diffusing an impurity element through the diffusion concentration distribution control layer so as to reach the absorption layer,

the concentration of the impurity element in the absorption layer is 5×

10¹⁶/cm³ or less, and

the light-receiving element receives light from the gas, the light having at least one wavelength of 3 μ

m or less, to detect a gas component and the like contained in the gas.

2. The gas monitoring device according to claim 1, wherein, in the diffusion concentration distribution control layer, the concentration of the impurity element decreases from a high concentration of about 1×

10¹⁸/cm³ or more on the side opposite the absorption layer to 5 10¹⁶/cm³ or less on the absorption layer side.

3. The gas monitoring device according to claim 1, wherein the absorption layer has a type II quantum well structure.

4. The gas monitoring device according to claim 3, wherein the absorption layer has a multiquantum well structure composed of (InGaAs/GaAsSb) or a multiquantum well structure composed of (GaInNAs (P, Sb)/GaAsSb).

5. The gas monitoring device according to claim 1, wherein the InP substrate is an off-angle substrate which is tilted at 5°

to 20°

from (100) in the [111] direction or the [11-1] direction.

6. The gas monitoring device according to claim 1, wherein the impurity element is zinc (Zn), and the diffusion concentration distribution control layer is composed of InGaAs.

7. The gas monitoring device according to claim 1, further comprising an InP window layer disposed on the diffusion concentration distribution control layer.

8. The gas monitoring device according to claim 1, wherein, in any two of the InP substrate, the absorption layer, and the diffusion concentration distribution control layer, lattice matching (|Δ

a/a|;

where a represents a lattice parameter and Δ

a represents a difference in the lattice parameter between the two) is 0.002 or less.

9. The gas monitoring device according to claim 1, wherein a plurality of the light-receiving elements are one-dimensionally or two-dimensionally arrayed.

10. The gas monitoring device according to claim 1, further comprising an imaging device including a two-dimensional array of the light-receiving elements, wherein images of the concentration distribution and the temperature distribution of the gas component in a predetermined range in the gas are formed with the imaging device.

11. The gas monitoring device according to claim 1, wherein, in the light-receiving element, the epitaxial layer top side that is opposite the InP substrate side with the absorption layer therebetween functions as a light-incident surface, or the InP substrate side functions as the light-incident surface and the InP substrate is removed or the thickness of the InP substrate is reduced to the same thickness as that of the absorption layer or less.

12. A combustion state monitoring device comprising the gas monitoring device according to claim 1, wherein a combustion state of a substance such as a fuel or garbage is monitored.

13. A secular change monitoring device comprising the gas monitoring device according to claim 1, wherein a gas component that is generated with a secular change in an instrument is monitored.

14. An impurity concentration monitoring device comprising the gas monitoring device according to claim 1, wherein the concentration of a gas component of impurities contained in a gas introduced from the outside is monitored.

15. A combustion state monitoring device comprising the gas monitoring device according to claim 2, wherein a combustion state of a substance such as a fuel or garbage is monitored.

16. A secular change monitoring device comprising the gas monitoring device according to claim 2, wherein a gas component that is generated with a secular change in an instrument is monitored.

17. An impurity concentration monitoring device comprising the gas monitoring device according to claim 2, wherein the concentration of a gas component of impurities contained in a gas introduced from the outside is monitored.

18. A combustion state monitoring device comprising the gas monitoring device according to claim 3, wherein a combustion state of a substance such as a fuel or garbage is monitored.

19. A secular change monitoring device comprising the gas monitoring device according to claim 3, wherein a gas component that is generated with a secular change in an instrument is monitored.

20. An impurity concentration monitoring device comprising the gas monitoring device according to claim 3, wherein the concentration of a gas component of impurities contained in a gas introduced from the outside is monitored.