METHOD OF MANUFACTURING MAGNETORESISTIVE DEVICE AND APPARATUS FOR MANUFACTURING THE SAME

• US 20110262634A1
• Filed: 07/06/2011
• Published: 10/27/2011
• Est. Priority Date: 03/03/2006
• Status: Active Grant

• Current Assignee: Canon Anelva Corporation (Canon Inc.)
• Original Assignee: Canon Anelva Corporation (Canon Inc.)
• Inventors: Maehara, Hiroki, Tsunekawa, Koji, Djayaprawira, David Djulianto, Nagamine, Yoshinori
• Granted Patent: US 8,367,156 B2
• Time in Patent Office: Days
• US Class Current: 427/131
• CPC Class Codes: C23C 14/081 of aluminium, magnesium or beryllium
• CPC Class Codes: C23C 14/16 on metallic substrates or on substrates of boron or silicon
• CPC Class Codes: C23C 14/568 Transferring the substrates through a series of coating stations C23C14/562 takes precedence
• CPC Class Codes: H01J 37/32458 Vessel
• CPC Class Codes: H01J 37/32633 Baffles
• CPC Class Codes: H01J 37/34 operating with cathodic sputtering H01J37/36 takes precedence ; methods of cathodic sputtering C23C14/34
• CPC Class Codes: H01J 37/3429 Plural materials
• CPC Class Codes: H01J 37/3447 Collimators, shutters, apertures
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/10 Magnetoresistive devices

Abstract

A magnetoresistive device has an MgO (magnesium oxide) layer provided between a first ferromagnetic layer and a second ferromagnetic layer. The device is manufactured by forming a film of the MgO layer in a film forming chamber. A substance whose getter effect with respect to an oxidizing gas is large is adhered to surfaces of components provided in the chamber for forming the MgO layer. The substance having a large getter effect is a substance whose value of oxygen gas adsorption energy is 145 kcal/mol or higher. Ta (tantalum), in particular, is preferable as a substance which constitutes the magnetoresistive device.

Claims

1. A method of manufacturing a magnetoresistive device having an MgO layer between a first ferromagnetic layer and a second ferromagnetic layer, the method comprising:

a step of forming the first ferromagnetic layer, a step of forming the MgO layer, and a step of forming the second ferromagnetic layer,

wherein the step of forming the MgO layer is carried out in a state in which a substrate is at a floating potential.

2. A method of manufacturing a magnetoresistive device having a substrate, a first ferromagnetic layer, a second ferromagnetic layer and an MgO layer formed between the first ferromagnetic layer and the second ferromagnetic layer, the method comprising:

a step of forming the first ferromagnetic layer on the substrate;

a step of forming the MgO layer; and

a step of forming the second ferromagnetic layer,

wherein the step of forming the MgO layer is carried out by placing the substrate on a substrate placing bed, wherein a portion of the substrate placing bed that comes into contact with the substrate is formed of an insulating substance.

3. The method of manufacturing the magnetoresistive device according to claim 2, the insulating substance is sprayed on the substrate placing bed.

4. The method of manufacturing the magnetoresistive device according to claim 2, wherein the substrate placing bed is formed of the insulating substance.

5. The method of manufacturing the magnetoresistive device according to claim 2, wherein the step of forming the MgO layer is carried out in a state in which a mask is arranged on a peripheral portion of the substrate so as to be apart from the substrate.

6. The method of manufacturing the magnetoresistive device according to claim 3, wherein the step of forming the MgO layer is carried out in a state in which a mask is arranged on a peripheral portion of the substrate so as to be apart from the substrate.

7. The method of manufacturing the magnetoresistive device according to claim 4, wherein the step of forming the MgO layer is carried out in a state in which a mask is arranged on a peripheral portion of the substrate so as to be apart from the substrate.

8. A method of manufacturing a magnetoresistive device having an MgO layer between a first ferromagnetic layer and a second ferromagnetic layer, the method comprising:

a step of forming the first ferromagnetic layer, a step of forming the MgO layer, and a step of forming the second ferromagnetic layer,

wherein the step of forming the MgO layer is carried out in a state in which the substrate and a substrate holding holder for holding the substrate are electrically insulated.

9. The method of manufacturing the magnetoresistive device according to claim 8, wherein the step of forming the MgO layer is carried out in a state in which a mask electrically insulated from the substrate is arranged in a peripheral portion of the substrate.

10. An apparatus for manufacturing a magnetoresistive device having an MgO layer between a first ferromagnetic layer and a second ferromagnetic layer, comprising:

a film forming chamber for forming the MgO layer; and

means for bringing a substrate into a state of being at a floating potential in the film forming chamber.

11. An apparatus for manufacturing a magnetoresistive device having an MgO layer between a first ferromagnetic layer and a second ferromagnetic layer, comprising:

a film forming chamber for forming the MgO layer;

means for electrically insulating a substrate and a substrate holder for holding the substrate in the film forming chamber.