MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
First Claim
1. A method for manufacturing a semiconductor device, comprising the steps of:
- forming a gate electrode layer;
forming a gate insulating film over the gate electrode layer;
performing oxygen doping treatment on the gate insulating film;
forming an oxide semiconductor film over the gate insulating film so as to overlap with the gate electrode layer;
performing heat treatment on the oxide semiconductor film;
forming a source electrode layer and a drain electrode layer which are electrically connected to the oxide semiconductor film; and
forming an insulating film over the oxide semiconductor film, the source electrode layer, and the drain electrode layer so as to be in contact with the oxide semiconductor film.
1 Assignment
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Accused Products
Abstract
Disclosed is a semiconductor device using an oxide semiconductor, with stable electric characteristics and high reliability. In a process for manufacturing a bottom-gate transistor including an oxide semiconductor film, dehydration or dehydrogenation is performed by heat treatment and oxygen doping treatment is performed. The transistor including a gate insulating film subjected to the oxygen doping treatment and the oxide semiconductor film subjected to the dehydration or dehydrogenation by the heat treatment is a transistor having high reliability in which the amount of change in threshold voltage of the transistor by the bias-temperature stress (BT) test can be reduced.
137 Citations
24 Claims
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1. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode layer; forming a gate insulating film over the gate electrode layer; performing oxygen doping treatment on the gate insulating film; forming an oxide semiconductor film over the gate insulating film so as to overlap with the gate electrode layer; performing heat treatment on the oxide semiconductor film; forming a source electrode layer and a drain electrode layer which are electrically connected to the oxide semiconductor film; and forming an insulating film over the oxide semiconductor film, the source electrode layer, and the drain electrode layer so as to be in contact with the oxide semiconductor film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode layer; forming a gate insulating film over the gate electrode layer; performing oxygen doping treatment on the gate insulating film; performing a first heat treatment on the gate insulating film; forming an oxide semiconductor film over the gate insulating film so as to overlap with the gate electrode layer; performing a second heat treatment on the oxide semiconductor film; forming a source electrode layer and a drain electrode layer which are electrically connected to the oxide semiconductor film; and forming an insulating film over the oxide semiconductor film, the source electrode layer, and the drain electrode layer so as to be in contact with the oxide semiconductor film. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode layer; forming a gate insulating film over the gate electrode layer; performing oxygen doping treatment on the gate insulating film; performing a first heat treatment on the gate insulating film; forming an oxide semiconductor film over the gate insulating film so as to overlap with the gate electrode layer; performing a second heat treatment on the oxide semiconductor film; forming a source electrode layer and a drain electrode layer which are electrically connected to the oxide semiconductor film; forming an insulating film over the oxide semiconductor film, the source electrode layer, and the drain electrode layer so as to be in contact with the oxide semiconductor film; and performing a third heat treatment on the insulating film. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24)
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Specification