HIGH-TEMPERATURE SELECTIVE DRY ETCH HAVING REDUCED POST-ETCH SOLID RESIDUE
First Claim
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1. A method of etching a silicon-containing layer on a substrate in a substrate processing region of a substrate processing chamber, the method comprising:
- flowing a fluorine-containing precursor and a hydrogen-containing precursor into a remote plasma region fluidly coupled to the substrate processing region while forming a plasma in the plasma region to produce plasma effluents; and
etching the silicon-containing layer by flowing the plasma effluents into the substrate processing region while maintaining the substrate at a processing temperature between about 60°
C. and about 160°
C.
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Abstract
Methods of dry etching silicon-containing dielectric films are described. The methods include maintaining a relatively high temperature of the dielectric films while etching in order to achieve reduced solid residue on the etched surface. Partially or completely avoiding the accumulation of solid residue increases the etch rate.
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15 Claims
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1. A method of etching a silicon-containing layer on a substrate in a substrate processing region of a substrate processing chamber, the method comprising:
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flowing a fluorine-containing precursor and a hydrogen-containing precursor into a remote plasma region fluidly coupled to the substrate processing region while forming a plasma in the plasma region to produce plasma effluents; and etching the silicon-containing layer by flowing the plasma effluents into the substrate processing region while maintaining the substrate at a processing temperature between about 60°
C. and about 160°
C. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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Specification