SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

• US 20110266542A1
• Filed: 04/27/2011
• Published: 11/03/2011
• Est. Priority Date: 04/28/2010
• Status: Abandoned Application

• Current Assignee: Electronics and Telecommunications Research Institute
• Original Assignee: Electronics and Telecommunications Research Institute
• Inventors: Hwang, Chi Sun, Park, Sang Hee, Cho, Kyoung Ik, RYU, Min Ki
• Application Number:
  US13/094,933
• Publication Number:
  US 20110266542A1
• Time in Patent Office: Days
• US Class Current: 257/57
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel

Abstract

Provided are a semiconductor device including a dual gate transistor and a method of fabricating the same. The semiconductor device includes a lower gate electrode, an upper gate electrode on the lower gate electrode, a contact plug interposed between the lower gate electrode and the upper gate electrode, and connecting the lower gate electrode to the upper gate electrode, and a functional electrode spaced apart from the upper gate electrode and formed at the same height as the upper gate electrode. The dual gate transistor exhibiting high field effect mobility is applied to the semiconductor device, so that characteristics of the semiconductor device can be improved. In particular, since no additional mask or deposition process is necessary, a large-area high-definition semiconductor device can be mass-produced with neither an increase in process cost nor a decrease in yield.

Claims

1. A semiconductor device comprising:

a lower gate electrode;

an upper gate electrode on the lower gate electrode;

a contact plug interposed between the lower gate electrode and the upper gate electrode, and connecting the lower gate electrode to the upper gate electrode; and

a functional electrode spaced apart from the upper gate electrode and formed at the same height as the upper gate electrode.

2. The device of claim 1, further comprising a source electrode and a drain electrode spaced apart from the contact plug and formed at the same height as the contact plug.

3. The device of claim 2, wherein the functional electrode is connected to the source or drain electrode.

4. The device of claim 1, wherein the contact plug, the source electrode and the drain electrode are formed of the same material.

5. The device of claim 1, wherein the upper gate electrode and the functional electrode are formed of the same material.

6. The device of claim 1, further comprising:

an organic light-emitting layer on the functional electrode; and

a common electrode on the organic light-emitting layer,

wherein the functional electrode is used as a pixel electrode of a display device.

7. The device of claim 1, further comprising:

a liquid crystal layer on the functional electrode; and

a common electrode on the liquid crystal layer,

wherein the functional electrode is used as a pixel electrode of a display device.

8. The device of claim 1, further comprising:

a spacer on the functional electrode; and

an upper electrode on the spacer,

wherein the functional electrode is used as a lower electrode of a sensor.

9. A method of fabricating a semiconductor device, comprising:

forming a lower gate electrode;

forming a gate insulating layer on an entire surface of the resultant structure in which the lower gate electrode is formed;

forming a conductive layer for an electrode on the gate insulating layer; and

etching the conductive layer for an electrode to form an upper gate electrode located above the lower gate electrode and a first functional electrode spaced apart from the upper gate electrode.

10. The method of claim 9, further comprising:

after forming the upper gate electrode and the first functional electrode,

forming an interlayer insulating layer on an entire surface of the resultant structure in which the upper gate electrode and the first functional electrode are formed;

etching the interlayer insulating layer to form an opening exposing a surface of the first functional electrode;

forming a material layer on the first functional electrode whose surface is exposed by the opening; and

forming a second functional electrode on the material layer.

11. The method of claim 9, wherein forming the gate insulating layer includes:

forming a first gate insulating layer on an entire structure of the resultant structure in which the lower gate electrode is formed;

forming a channel layer partially overlapping the lower gate electrode on the first gate insulating layer;

etching the first gate insulating layer to form a first contact hole exposing a surface of the lower gate electrode;

forming a conductive layer for a contact on the first gate insulating layer in which the first contact hole is formed; and

etching the conductive layer for a contact to form a contact plug connected to the lower gate electrode and a source electrode and a drain electrode contacting both ends of the channel layer disposed at a position spaced apart from the contact plug.

12. The method of claim 11, further comprising:

after forming the source and drain electrodes,

forming a second gate insulating layer on an entire surface of the resultant structure in which the contact plug, the source and drain electrodes are formed; and

etching the second gate insulating layer to form a second contact hole exposing a surface of the contact plug and a third contact hole exposing surfaces of the source and drain electrodes.

13. The method of claim 11, wherein forming the gate insulating layer includes:

forming a first gate insulating layer on an entire surface of the resultant structure in which the lower gate electrode is formed;

etching the first gate insulating layer to form a first contact hole exposing a surface of the lower gate electrode;

forming a conductive layer for a contact on the first gate insulating layer in which the first contact hole is formed;

etching the conductive layer for a contact to form a contact plug connected to the lower gate electrode and a source electrode and a drain electrode disposed at a position spaced apart from the contact plug; and

forming a channel layer on the first gate insulating layer between the source and drain electrode.

14. The method of claim 13, further comprising:

after forming the channel layer,

forming a second gate insulating layer on an entire surface of the resultant structure in which the channel layer is formed; and

etching the second gate insulating layer to form a second contact hole exposing a surface of the contact plug and a third contact hole exposing surfaces of the source and drain electrodes.