NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
First Claim
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1. A nonvolatile memory device comprising:
- a plurality of strings each having vertically-stacked active layers over a plurality of word lines;
at least one bit line connection unit vertically formed over one end of the word lines and having a stairway shape; and
a plurality of bit lines each coupled to each of a plurality of active regions of the bit line connection unit.
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Abstract
A nonvolatile memory device includes a plurality of strings each having vertically-stacked active layers over a plurality of word lines, at least one bit line connection unit vertically formed over one end of the word lines and having a stairway shape, and a plurality of bit lines each coupled to each of a plurality of active regions of the bit line connection unit.
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Citations
21 Claims
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1. A nonvolatile memory device comprising:
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a plurality of strings each having vertically-stacked active layers over a plurality of word lines; at least one bit line connection unit vertically formed over one end of the word lines and having a stairway shape; and a plurality of bit lines each coupled to each of a plurality of active regions of the bit line connection unit. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method for fabricating a nonvolatile memory device, comprising:
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forming a multilayer structure having a plurality of active layers and a plurality of dielectric layers stacked alternately over a plurality of word lines; forming at least one bit line connection unit having stairway shaped active layers by etching one end of the multilayer structure; forming stairway shaped active regions in the bit line connection unit; forming a plurality of bit line plugs each connected to each of the active regions of the bit line connection unit; and forming a plurality of bit lines each connected to each of the bit line plugs. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21)
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Specification