COMPACT DIRECTIONAL COUPLER USING SEMICONDUCTOR PROCESS AND MOBILE RFID READER TRANSCEIVER SYSTEM USING THE SAME

• US 20110267194A1
• Filed: 07/06/2010
• Published: 11/03/2011
• Est. Priority Date: 05/03/2010
• Status: Abandoned Application

• Current Assignee: Korea Advanced Institute of Science and Technology
• Original Assignee: Korea Advanced Institute of Science and Technology
• Inventors: Hong, Song Cheol, Shim, Sun Bo
• Application Number:
  US12/831,240
• Publication Number:
  US 20110267194A1
• Time in Patent Office: Days
• US Class Current: 340/572.7
• CPC Class Codes: H01P 5/185 Edge coupled lines

Abstract

A compact directional coupler and a mobile Radio-Frequency Identification (RFID) reader transceiver system using the same. The compact directional coupler can include a primary transmission line, a secondary transmission line, and a second capacitor connected in parallel to the secondary transmission line. The coupler can further include a first capacitor connected in parallel to the primary transmission line and capacitors connected between both end of the first capacitors and the ground respectively. A mobile RFID reader transceiver system can include a transmission terminal circuit, a power amplifier, the compact directional coupler, an antenna, a low noise amplifier, and the reception terminal circuit. The system further can include a band-pass filer, and/or a power combiner to match an output terminal of the power amplifier.

Claims

1-22. -22. (canceled)

23. A compact directional coupler using a semiconductor process, the compact directional coupler comprising:

a primary transmission line formed on a semiconductor substrate;

a secondary transmission line formed on the semiconductor substrate; and

a capacitor connected in parallel to the secondary transmission line.

24. The compact directional coupler as set forth in claim 23, wherein the primary transmission line and the secondary transmission line are formed in a spiral arrangement using a metal line process of the semiconductor process.

25. The compact directional coupler as set forth in claim 24, wherein an outside loop of the primary transmission line surrounds the secondary transmission line, and an outside loop of the secondary transmission line surrounds an inside loop of the primary transmission line.

26. The compact directional coupler as set forth in claim 24, wherein a ratio of a number of turns of the primary transmission line to that of the secondary transmission line in the spiral arrangement is arbitrarily determined.

27. The compact directional coupler as set forth in claim 24, wherein the metal line process is a multi-layer metal line process configured to increase a number of turns of the primary transmission line and the secondary transmission line in the spiral arrangement.

28. The compact directional coupler as set forth in claim 23, further comprising a capacitor connected in parallel to the primary transmission line.

29. The compact directional coupler as set forth in claim 28, wherein capacitance of the capacitor that is connected in parallel to the primary transmission line is less than that of the capacitor that is connected in parallel to the secondary transmission line.

30. The compact directional coupler as set forth in claim 28, further comprising:

a capacitor arranged between one port of the primary transmission line and the ground; and

a capacitor arranged between another port of the primary transmission line and the ground.

31. The compact directional coupler as set forth in claim 23, further comprising a resistor arranged between one port of the secondary transmission line and the ground.

32. The compact directional coupler as set forth in claim 31, wherein the resistor has a resistance of 50 Ω

.

33. The compact directional coupler as set forth in claim 23, wherein the semiconductor process is an integrated passive device process.

44. The compact directional coupler as set forth in claim 29, further comprising:

a capacitor arranged between one port of the primary transmission line and the ground; and

a capacitor arranged between another port of the primary transmission line and the ground.

34. A mobile Radio-Frequency Identification (RFID) reader transceiver system comprising:

a transmission terminal circuit configured to process a transmission signal;

a power amplifier configured to amplify the transmission signal;

a transmission/reception antenna configured to transmit the transmission signal and receive a reception signal;

a low noise amplifier configured to amplify the reception signal;

a reception terminal circuit configured to process the reception signal; and

a directional coupler configured to connect the transmission/reception antenna to the power amplifier and the low noise amplifier;

wherein the directional coupler comprises;

a primary transmission line formed on a semiconductor substrate;

a secondary transmission line formed on the semiconductor substrate; and

a capacitor connected in parallel to the secondary transmission line.

35. The mobile RFID reader transceiver system as set forth in claim 34, wherein the primary transmission line and the secondary transmission line are formed in a spiral arrangement using a metal line process of a semiconductor process, an outside loop of the primary transmission line surrounds the secondary transmission line, and an outside loop of the secondary transmission line surrounds an inside loop of the primary transmission line.

36. The mobile RFID reader transceiver system as set forth in claim 34, further comprising a resistor arranged between one of two ports of the secondary transmission line and the ground.

37. The mobile RFID reader transceiver system as set forth in claim 34, further comprising a capacitor connected in parallel to the primary transmission line.

38. The mobile RFID reader transceiver system as set forth in claim 37, further comprising:

a capacitor arranged between one port of the primary transmission line and the ground; and

a capacitor arranged between another port of the primary transmission line and the ground.

39. The mobile RFID reader transceiver system as set forth in claim 34, further comprising a band-pass filter arranged between the directional coupler and the low noise amplifier.

40. The mobile RFID reader transceiver system as set forth in claim 39, wherein the band-pass filter is one of a Surface Acoustic Wave (SAW) filter, a Bulk Acoustic Filter (BAW), or a ceramic filter.

41. The mobile RFID reader transceiver system as set forth in claim 34, further comprising a power combiner arranged between the directional coupler and the power amplifier, and configured to match an output terminal of the power amplifier.

42. The mobile RFID reader transceiver system as set forth in claim 41, wherein the directional coupler and the power combiner are packaged in a single chip using a semiconductor process.

43. The mobile RFID reader transceiver system as set forth in claim 42, wherein the semiconductor process is an integrated passive device process.

45. A compact directional coupler comprising:

a primary transmission line having a value of inductance, wherein a signal is transmitted thorough the primary transmission line;

a secondary transmission line having a value of inductance, the secondary transmission line extracting a portion of the power of the signal transmitted through the primary transmission line; and

a capacitor connected in parallel to the secondary transmission line.

46. The compact directional coupler as set forth in claim 45, further comprising a capacitor connected in parallel to the primary transmission line.

47. The compact directional coupler as set forth in claim 46, wherein the capacitance of the capacitor that is connected in parallel to the primary transmission line is less than the capacitance of the capacitor that is connected in parallel to the secondary transmission line.

48. The compact directional coupler as set forth in claim 46, further comprising:

a capacitor connected between one port of the primary transmission line and the ground; and

a capacitor connected between another port of the primary transmission line and the ground.

49. The compact directional coupler as set forth in claim 45, further comprising a resistor connected between one port of the secondary transmission line and the ground.

50. The compact directional coupler as set forth in claim 49, wherein the resistor has a resistance of 50 Ω

.

51. A mobile Radio-Frequency Identification (RFID) reader transceiver system comprising:

a transmission terminal circuit configured to process a transmission signal;

a power amplifier configured to amplify the transmission signal;

a power combiner configured to match an output terminal of the power amplifier;

a transmission/reception antenna configured to transmit the transmission signal and receive a reception signal;

a low noise amplifier configured to amplify the reception signal while maintaining a high signal-to-noise ratio of the reception signal;

a reception terminal circuit configured to process the reception signal; and

a directional coupler configured to connect the transmission/reception antenna to the power combiner and the low noise amplifier;

wherein the directional coupler comprises;

a primary transmission line formed on a semiconductor substrate;

a secondary transmission line formed on the semiconductor substrate;

a capacitor connected in parallel to the primary transmission line;

a capacitor connected in parallel to the secondary transmission line;

a capacitor arranged between one port of the primary transmission line and the ground;

a capacitor arranged between another port of the primary transmission line and the ground; and

a resistor arranged between one of two ports of the secondary transmission line and the ground,

wherein the primary transmission line and the secondary transmission line are formed in a spiral arrangement using a metal line process of a semiconductor process, an outside loop of the primary transmission line surrounds the secondary transmission line, and an outside loop of the secondary transmission line surrounds an inside loop of the primary transmission line,

wherein the directional coupler and the power combiner are packaged in a single chip using a semiconductor process, and

wherein the semiconductor process is an integrated passive device process.