METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
First Claim
1. A method for manufacturing a semiconductor device, comprising the steps of:
- forming a resist mask over an oxide semiconductor layer;
forming an island-shaped oxide semiconductor layer by using the resist mask;
removing the resist mask;
introducing oxygen to the island-shaped oxide semiconductor layer; and
performing a heat treatment on the island-shaped oxide semiconductor layer,wherein the step of removing the resist mask, the step of introducing oxygen to the island-shaped oxide semiconductor layer, and the step of performing the heat treatment on the island-shaped oxide semiconductor layer are successively performed without exposure to air.
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Accused Products
Abstract
A semiconductor device including an oxide semiconductor with stable electric characteristics and high reliability is provided. An island-shaped oxide semiconductor layer is formed by using a resist mask, the resist mask is removed, oxygen is introduced (added) to the oxide semiconductor layer, and heat treatment is performed. The removal of the resist mask, introduction of the oxygen, and heat treatment are performed successively without exposure to the air. Through the oxygen introduction and heat treatment, impurities such as hydrogen, moisture, a hydroxyl group, or hydride are intentionally removed from the oxide semiconductor layer, whereby the oxide semiconductor layer is highly purified. Chlorine may be introduced to an insulating layer over which the oxide semiconductor layer is formed before formation of the oxide semiconductor layer. By introducing chlorine, hydrogen in the insulating layer can be fixed, thereby preventing diffusion of hydrogen from the insulating layer into the oxide semiconductor layer.
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Citations
13 Claims
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1. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a resist mask over an oxide semiconductor layer; forming an island-shaped oxide semiconductor layer by using the resist mask; removing the resist mask; introducing oxygen to the island-shaped oxide semiconductor layer; and performing a heat treatment on the island-shaped oxide semiconductor layer, wherein the step of removing the resist mask, the step of introducing oxygen to the island-shaped oxide semiconductor layer, and the step of performing the heat treatment on the island-shaped oxide semiconductor layer are successively performed without exposure to air. - View Dependent Claims (2, 3, 4)
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5. A method for manufacturing a semiconductor device, comprising the steps of:
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introducing chlorine to an insulating layer; forming an oxide semiconductor layer over the insulating layer; forming a resist mask over the oxide semiconductor layer; forming an island-shaped oxide semiconductor layer by using the resist mask; removing the resist mask; introducing oxygen to the island-shaped oxide semiconductor layer; and performing a heat treatment on the island-shaped oxide semiconductor layer, wherein the step of removing the resist mask, the step of introducing oxygen to the island-shaped oxide semiconductor layer, and the step of performing the heat treatment on the island-shaped oxide semiconductor layer are successively performed without exposure to air. - View Dependent Claims (6, 7, 8)
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9. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a cap layer over an oxide semiconductor layer; forming a resist mask over the cap layer; forming an island-shaped oxide semiconductor layer and an island-shaped cap layer by using the resist mask; removing the resist mask; introducing oxygen to the island-shaped oxide semiconductor layer through the island-shaped cap layer; and performing a heat treatment on the island-shaped oxide semiconductor layer, wherein the step of removing the resist mask, the step of introducing oxygen to the island-shaped oxide semiconductor layer, and the step of performing the heat treatment on the island-shaped oxide semiconductor layer are successively performed without exposure to air. - View Dependent Claims (10, 11, 12, 13)
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Specification