Planarization of a Material System in a Semiconductor Device by Using a Non-Selective In Situ Prepared Slurry
First Claim
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1. A method of planarizing a surface of a semiconductor device in the presence of at least two different dielectric materials, the method comprising:
- providing a first solution in a manufacturing environment, said first solution having a first pH value and comprising abrasive particles;
providing a second solution in said manufacturing environment, said second solution comprising an acid;
producing a slurry solution in said manufacturing environment from at least said first and second solutions, said slurry solution having a second pH value that is less than said first pH value, said second pH value resulting in an approximation of removal rates of said at least two different dielectric materials for a given percentage of said abrasive particles in said slurry solution so as to adjust a balance of said removal rates; and
performing a planarization process in said manufacturing environment using said slurry solution produced in said manufacturing environment.
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Abstract
For complex CMP processes requiring the removal of different dielectric materials, possibly in the presence of a polysilicon material, a slurry material may be adapted at the point of use by selecting an appropriate pH value and avoiding agglomeration of the abrasive particles. The in situ preparation of the slurry material may also enable a highly dynamic adaptation of the removal conditions, for instance when exposing the polysilicon material of gate electrode structures in replacement gate approaches.
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Citations
20 Claims
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1. A method of planarizing a surface of a semiconductor device in the presence of at least two different dielectric materials, the method comprising:
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providing a first solution in a manufacturing environment, said first solution having a first pH value and comprising abrasive particles; providing a second solution in said manufacturing environment, said second solution comprising an acid; producing a slurry solution in said manufacturing environment from at least said first and second solutions, said slurry solution having a second pH value that is less than said first pH value, said second pH value resulting in an approximation of removal rates of said at least two different dielectric materials for a given percentage of said abrasive particles in said slurry solution so as to adjust a balance of said removal rates; and performing a planarization process in said manufacturing environment using said slurry solution produced in said manufacturing environment. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method, comprising:
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producing a slurry solution having a matched removal rate for silicon dioxide and silicon nitride by adjusting a pH value and stabilizing said slurry solution so as to avoid agglomeration of abrasive particles of said slurry solution; and performing a planarization process for removing at least silicon dioxide and silicon nitride from a semiconductor device by using said slurry solution so as to expose a polysilicon material of a gate electrode structure. - View Dependent Claims (12, 13, 14, 15, 16, 17)
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18. A chemical mechanical planarization system for concurrently removing at least two different dielectric materials from a single substrate, comprising:
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a process chamber configured to receive and hold in place said substrate, said process chamber comprising a slurry supply unit; a first supply unit for providing a first solution comprising abrasive particles; a second supply unit for providing a pH value adjusting solution comprising at least one of a surfactant and de-ionized water; and a mixer unit connected to said first and second supply units and configured to produce a homogenous blend from said first solution and said pH value adjusting solution so as to provide a substantially matched removal rate for silicon dioxide material and silicon nitride material, said mixer unit being operatively connected to said slurry supply unit. - View Dependent Claims (19, 20)
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Specification