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Planarization of a Material System in a Semiconductor Device by Using a Non-Selective In Situ Prepared Slurry

  • US 20110269381A1
  • Filed: 12/16/2010
  • Published: 11/03/2011
  • Est. Priority Date: 04/30/2010
  • Status: Active Grant
First Claim
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1. A method of planarizing a surface of a semiconductor device in the presence of at least two different dielectric materials, the method comprising:

  • providing a first solution in a manufacturing environment, said first solution having a first pH value and comprising abrasive particles;

    providing a second solution in said manufacturing environment, said second solution comprising an acid;

    producing a slurry solution in said manufacturing environment from at least said first and second solutions, said slurry solution having a second pH value that is less than said first pH value, said second pH value resulting in an approximation of removal rates of said at least two different dielectric materials for a given percentage of said abrasive particles in said slurry solution so as to adjust a balance of said removal rates; and

    performing a planarization process in said manufacturing environment using said slurry solution produced in said manufacturing environment.

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