HERMETIC WAFER-TO-WAFER BONDING WITH ELECTRICAL INTERCONNECTION
First Claim
1. A method for forming an integrated circuit comprising:
- providing a first substrate;
forming a first conductive material that is entirely recessed relative to a surface of the first substrate;
providing a second substrate;
forming a second conductive material that is entirely recessed relative to a surface of the second substrate; and
reflowing at least one of the first and second conductive material to form a single reflowed interconnect between the first and second substrate.
1 Assignment
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Accused Products
Abstract
An implantable medical device (IMD) is disclosed. The IMD includes a first substrate having a front side and a backside. A first via is formed in the front side, the via extending from a bottom point in the front side to a first height located at a surface of the front side. A first conductive pad is formed in the first via, the first conductive pad having an exposed top surface lower than first height. A second substrate is coupled to the first substrate, the second substrate having a second via formed in the front side, the via extending from a bottom point in the front side to a second height located at a surface of the front side. A second conductive pad is formed in the second via, the second conductive pad having an exposed top surface lower than second height. The coupled substrates are heated until a portion of one or both conductive pads reflow, dewet, agglomerate, and merge to form an interconnect, hermetic seal, or both depending on the requirements of the device.
109 Citations
29 Claims
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1. A method for forming an integrated circuit comprising:
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providing a first substrate; forming a first conductive material that is entirely recessed relative to a surface of the first substrate; providing a second substrate; forming a second conductive material that is entirely recessed relative to a surface of the second substrate; and reflowing at least one of the first and second conductive material to form a single reflowed interconnect between the first and second substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method comprising:
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providing a first substrate; introducing a first conductive material that is entirely recessed relative to a surface of the first substrate; providing a second substrate; introducing a second conductive material that is entirely recessed relative to a surface of the second substrate; and heating the first and second conductive material to form a single reflowed interconnect between the first and second substrate. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25)
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26. An integrated circuit comprising:
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means for providing a first substrate; means for forming a first conductive material that is entirely recessed relative to a surface of the first substrate; means for providing a second substrate; means for forming a second conductive material that is entirely recessed relative to a surface of the second substrate; and means for reflowing at least one of the first and second conductive material to form a single reflowed interconnect between the first and second substrate. - View Dependent Claims (27, 28, 29)
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Specification