MANUFACTURING METHOD OF ULTRASONIC PROBE AND ULTRASONIC PROBE
First Claim
1. A manufacturing method of an ultrasonic probe for forming an ultrasonic probe mounted with a semiconductor device, in which an element having an upper electrode mechanically operated when a potential difference is applied between the upper electrode and a lower electrode disposed via a cavity part serves as one cell, blocks each including a predetermined number of the cells disposed in a first direction and a second direction orthogonal to the first direction are provided on a main surface of a semiconductor substrate, the upper electrodes of the plurality of cells constituting the blocks disposed in the first direction are electrically connected to each other by spokes, the lower electrodes of the plurality of cells constituting the blocks disposed in the second direction are electrically connected to each other, and the blocks are disposed in a matrix in the first direction and the second direction, the manufacturing method comprising:
- (a) a step of measuring a breakdown voltage between the upper electrode and the lower electrode after operating the upper electrode;
(b) a step of removing the upper electrode of the cell determined to be defective in the step (a); and
(c) a step of forming a protective film on the main surface of the semiconductor substrate after the step (b).
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Accused Products
Abstract
The manufacturing yield of semiconductor devices (CMUTs) is improved. Before a polyimide film serving as a protective film is formed, a membrane is repeatedly vibrated to evaluate the breakdown voltage between an upper electrode and a lower electrode, and the upper electrode of a defective CMUT cell whose breakdown voltage between the upper electrode and the lower electrode is reduced due to the repeated vibrations of the membrane is removed in advance to cut off the electrical connection with other normal CMUT cells. By this means, in a block RB or a channel RCH including the recovered CMUT cell RC, reduction in the breakdown voltage between the upper electrode and the lower electrode after the repeated vibrations of the membrane is prevented.
63 Citations
15 Claims
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1. A manufacturing method of an ultrasonic probe for forming an ultrasonic probe mounted with a semiconductor device, in which an element having an upper electrode mechanically operated when a potential difference is applied between the upper electrode and a lower electrode disposed via a cavity part serves as one cell, blocks each including a predetermined number of the cells disposed in a first direction and a second direction orthogonal to the first direction are provided on a main surface of a semiconductor substrate, the upper electrodes of the plurality of cells constituting the blocks disposed in the first direction are electrically connected to each other by spokes, the lower electrodes of the plurality of cells constituting the blocks disposed in the second direction are electrically connected to each other, and the blocks are disposed in a matrix in the first direction and the second direction, the manufacturing method comprising:
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(a) a step of measuring a breakdown voltage between the upper electrode and the lower electrode after operating the upper electrode; (b) a step of removing the upper electrode of the cell determined to be defective in the step (a); and (c) a step of forming a protective film on the main surface of the semiconductor substrate after the step (b). - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. An ultrasonic probe mounted with a semiconductor device, in which an element having an upper electrode mechanically operated when a potential difference is applied between the upper electrode and a lower electrode disposed via a cavity part serves as one cell, blocks each including a predetermined number of the cells disposed in a first direction and a second direction orthogonal to the first direction are provided on a main surface of a semiconductor substrate, the upper electrodes of the plurality of cells constituting the blocks disposed in the first direction are electrically connected to each other by spokes, the lower electrodes of the plurality of cells constituting the blocks disposed in the second direction are electrically connected to each other, and the blocks are disposed in a matrix in the first direction and the second direction,
wherein the upper electrode having insulation defect between itself and the lower electrode is removed, and a protective film formed on the main surface of the semiconductor substrate from which the upper electrode has been removed is provided.
Specification