ALGAINP-BASED LIGHT-EMITTING DIODE WITH DOUBLE REFLECTIVE LAYERS AND FABRICATION METHOD THEREOF

• US 20110272724A1
• Filed: 05/02/2011
• Published: 11/10/2011
• Est. Priority Date: 05/04/2010
• Status: Active Grant

• Current Assignee: Quanzhou Sanan Semiconductor Technology Co., Ltd. (Sanan Optoelectronics Company Limited)
• Original Assignee: Xiamen Sanan Optoelectronics Technology Company Limited (Sanan Optoelectronics Company Limited)
• Inventors: LIN, SUHUI, LIN, KECHUANG, TSAI, CHIAHAO, ZHENG, JIANSEN, YIN, LINGFENG
• Granted Patent: US 8,399,906 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 33/30 containing only elements of Group III and Group V of the Periodic Table
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector

Abstract

The invention discloses an AlGaInP-based LED with double reflective layers and a fabrication method thereof. The method includes: providing a temporary substrate; forming an epitaxial layer on a front of the temporary substrate; forming a distributed Bragg reflector on the epitaxial layer; forming an some openings in the distributed Bragg reflector, such that the arrangement of the distributed Bragg reflector is grid-like and a portion of a top of the epitaxial layer is exposed; forming a reflective metal layer on the distributed Bragg reflector and on the exposed portion of the top of the epitaxial layer, to fill the openings; bonding a permanent substrate onto the reflective metal layer; removing the temporary substrate; forming a first electrode and a second electrode at a bottom of the epitaxial layer and a top of the permanent substrate, respectively; and dicing to obtain the AlGaInP-based LED chips. The AlGaInP-based LED with both the distributed Bragg reflector and the reflective metal layer according to the invention can fully utilize good reflectivity of the reflective layers to the extreme, and improve the light-emission efficiency of the AlGaInP-based LED effectively.

Claims

1. An AlGaInP-based light-emitting diode (LED) with double reflective layers, comprising:

an epitaxial layer;

a distributed Bragg reflector formed on a top of the epitaxial layer, wherein the arrangement of the distributed Bragg reflector is grid-like with a portion of the top of the epitaxial layer exposed;

a reflective metal layer formed on the distributed Bragg reflector and on the exposed portion of the top of the epitaxial layer;

a permanent substrate formed on the reflective metal layer;

a first electrode formed on a bottom of the epitaxial layer; and

a second electrode formed on the permanent substrate.

2. The AlGaInP-based LED with double reflective layers according to claim 1, wherein:

the temporary substrate is a GaAs substrate.

3. The AlGaInP-based LED with double reflective layers according to claim 1, wherein the material for the permanent substrate is any one or a combination of:

Si, GaP, SiC, Cu, Ni, Mo, and AlN.

4. The AlGaInP-based LED with double reflective layers according to claim 1, wherein:

the distributed Bragg reflector is formed by layers of alternating materials with a high refractive index and a low refractive index.

5. The AlGaInP-based LED with double reflective layers according to claim 4, wherein:

the material with the high refractive index in the distributed Bragg reflector is any one or a combination of;

TiO, TiO₂, Ti₃O₅, Ti₂O₃, Ta₂O₅, and ZrO₂.

6. The AlGaInP-based LED with double reflective layers according to claim 4, wherein:

the material with the low refractive index in the distributed Bragg reflector is SiNx, SiO₂, or a combination of SiNx and SiO₂.

7. The AlGaInP-based LED with double reflective layers according to claim 1, wherein:

the grid-like arranged distributed Bragg reflector has rectangular patterns, round patterns, or polygon patterns.

8. The AlGaInP-based LED with double reflective layers according to claim 1, wherein:

the material of the reflective metal layer is any one or a combination of;

Au, Be/Au, Au/Zn, and Pd.

9. The AlGaInP-based LED with double reflective layers according to claim 1, wherein:

the permanent substrate is bonded with the reflective metal layer by wafer bonding or electroplating.

10. A method for fabricating an AlGaInP-based light-emitting diode (LED) with double reflective layers, comprising:

1) providing a temporary substrate;

2) forming an epitaxial layer on the temporary substrate;

3) forming a distributed Bragg reflector on the epitaxial layer;

4) forming a plurality of openings in the distributed Bragg reflector, such that the arrangement of the distributed Bragg reflector is grid-like and a top of the epitaxial layer is partially exposed;

5) forming a reflective metal layer on the distributed Bragg reflector and on the exposed portion of the top of the epitaxial layer;

6) bonding a permanent substrate with the reflective metal layer;

7) removing the temporary substrate;

8) forming a first electrode and a second electrode at a bottom of the epitaxial layer and a top of the permanent substrate, respectively; and

9) dicing to obtain AlGaInP-based LED chips.

11. The method for fabricating an AlGaInP-based LED with double reflective layers according to claim 10, wherein:

the temporary substrate is a GaAs substrate.

12. The method for fabricating an AlGaInP-based LED with double reflective layers according to claim 10, wherein the material for the permanent substrate is any one or a combination of:

Si, GaP, SiC, Cu, Ni, Mo, and AlN.

13. The method for fabricating an AlGaInP-based LED with double reflective layers according to claim 10, wherein:

the distributed Bragg reflector is formed by layers of alternating materials with a high refractive index and a low refractive index.

14. The method for fabricating an AlGaInP-based LED with double reflective layers according to claim 13, wherein the material with the high refractive index in the distributed Bragg reflector is any one or a combination of:

TiO, TiO₂, Ti₃O₅, Ti₂O₃, Ta₂O₅, and ZrO₂.

15. The method for fabricating an AlGaInP-based LED with double reflective layers according to claim 13, wherein the material with the low refractive index in the distributed Bragg reflector is SiNx, SiO₂, or a combination of SiNx and SiO₂.

16. The method for fabricating an AlGaInP-based LED with double reflective layers according to claim 10, wherein the grid-like arranged distributed Bragg reflector has rectangular patterns, round patterns, or polygon patterns.

17. The method for fabricating an AlGaInP-based LED with double reflective layers according to claim 10, wherein the material of the reflective metal layer is any one or a combination of:

Au, Be/Au, Au/Zn, and Pd.

18. The method for fabricating an AlGaInP-based LED with double reflective layers according to claim 10, wherein the permanent substrate is bonded with the reflective metal layer by wafer bonding or electroplating.